On-chip chalcogenide microresonators with low-threshold parametric oscillation

Bin Zhang; Pingyang Zeng; Zelin Yang; Di Xia; Jiaxin Zhao; Yaodong Sun; Yufei Huang; Jingcui Song; Jingshun Pan; Huanjie Cheng; Dukyong Choi; Zhaohui Li

doi:10.1364/PRJ.422435

Journals >Photonics Research >Volume 9 >Issue 7 >Page 1272 > Article

Photonics Research
Vol. 9, Issue 7, 1272 (2021)

On-chip chalcogenide microresonators with low-threshold parametric oscillation

Bin Zhang^{1、4、†,*}, Pingyang Zeng^1、†, Zelin Yang^1、†, Di Xia^1、†, Jiaxin Zhao¹, Yaodong Sun¹, Yufei Huang¹, Jingcui Song¹, Jingshun Pan¹, Huanjie Cheng¹, Dukyong Choi², and Zhaohui Li^{1、3、5、*}

Author Affiliations

¹Key Laboratory of Optoelectronic Materials and Technologies, School of Electrical and Information Technology, Sun Yat-sen University, Guangzhou 510275, China

²Laser Physics Centre, Research School of Physics, Australian National University, Canberra, ACT 2601, Australia

³Southern Marine Science and Engineering Guangdong Laboratory (Zhuhai), Zhuhai 519000, China

⁴e-mail: zhangbin5@mail.sysu.edu.cn

⁵e-mail: lzhh88@mail.sysu.edu.cn

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DOI: 10.1364/PRJ.422435 Cite this Article Set citation alerts

Bin Zhang, Pingyang Zeng, Zelin Yang, Di Xia, Jiaxin Zhao, Yaodong Sun, Yufei Huang, Jingcui Song, Jingshun Pan, Huanjie Cheng, Dukyong Choi, Zhaohui Li, "On-chip chalcogenide microresonators with low-threshold parametric oscillation," Photonics Res. 9, 1272 (2021) Copy Citation Text

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(a) Schematic of the improved As2S3 film by an in situ light-induced annealing process. The molecular structures of the As2S3 (b) before and (c) after annealing. The optical microscope images in dark field mode of As2S3 film: (d) oxidated before annealing; (e) maintained stability after the annealing process in the air.

Fig. 1. (a) Schematic of the improved As2S3 film by an in situ light-induced annealing process. The molecular structures of the As2S3 (b) before and (c) after annealing. The optical microscope images in dark field mode of As2S3 film: (d) oxidated before annealing; (e) maintained stability after the annealing process in the air.

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(a) Composition of As2S3 bulk glass, FILM-D, FILM-L, and T180. (b) RI of FILM-D, FILM-L, T130, T150, and T180 as well as the As2S3 bulk glass. (c) Raman spectra of FIML-D, FILM-L, the glass, and films T130, T150, and T180. (Note: FILM-L annealed at the power densities of 200 mW/cm2.) SEM of the waveguide after the electron-beam resist development step with different films: (d) FILM-T; (e) FILM-L.

Fig. 2. (a) Composition of As2S3 bulk glass, FILM-D, FILM-L, and T180. (b) RI of FILM-D, FILM-L, T130, T150, and T180 as well as the As2S3 bulk glass. (c) Raman spectra of FIML-D, FILM-L, the glass, and films T130, T150, and T180. (Note: FILM-L annealed at the power densities of 200 mW/cm2.) SEM of the waveguide after the electron-beam resist development step with different films: (d) FILM-T; (e) FILM-L.

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Fig. 3. Raman Spectra of As2S3 films by light annealing under power densities of (a) 10 mW/cm2, (b) 100 mW/cm2, and (c) 200 mW/cm2. (d) Changes of the S8 bonds at 219 cm−1 in As2S3 films under different power densities of light in 900 min. (e) RIs of As2S3 films by light annealing under different power densities of light after 900 min and FILM-D, FILM-T180 as well as the bulk glass.

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Fig. 4. 3D AFM scan images of the surface of ChG films: by light annealing under power densities of (a) 10 mW/cm2 and (b) 200 mW/cm2; (c) by thermal annealing at the temperature of 180°C. (d) Film as deposited.

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Fig. 5. (a) Fabrication process for As2S3/BCB waveguides. SEM images of (b) cross-sectional and (c) top view of the As2S3 spiral waveguide. (d) Measured propagation losses of ChG waveguides (lines a–c correspond to waveguides with and without the resist as well as with BCB by thermal reflow, respectively). (e) BCB-cladding waveguides at different thermal reflow temperatures (lines a–d correspond to waveguides reflowed at 180°C, 160°C, 120°C, and 140°C, respectively).

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Fig. 6. (a) Simulated dispersion of As2S3 microring resonator for quasi-TE and TM modes. Insets are calculated TE and TM mode profiles around 1550 nm, respectively. (b) Transmission spectrum of the resonator in the range 1510–1630 nm (TM00). (c) Histogram of intrinsic loss from the measurement of the ChG MR (TM00). (d) One typical resonance with a linewidth of 238 MHz (TM00). SEM images of the top view of (e) microring and (f) enlarged microring section.

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Fig. 7. (a) Schematic of the OPO measurement setup. (b) Measured OPO spectrum for input power of 7 mW (TM00). (c) Output power of the first-generated OPO sideband as a function of input power.

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Raman Shift ( ${cm}^{- 1}$ )	Assignment
135	Homopolar bonds
165	Homopolar bonds
189	S-S homopolar bonds
219	$S_{8}$ ring
234	As-As homopolar bonds in ${As}_{4} S_{4}$ unit
310	${As}_{4} S_{4}$ unit
345	As-S vibration in ${AsS}_{3}$ pyramids
356	${As}_{4} S_{4}$ unit
380	Interaction of the ${AsS}_{3}$ unit

Table 1. Assignments of Raman Shifts Corresponding to the Chemical Bonds in As2S3 Films

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	RIE	ICP
Chemistry	${CHF}_{3} : Ar$	$Ar : {CF}_{4} : O_{2}$
Pressure (mTorr)	10	10
RF power (W)	100	10
ICP power (W)		300

Table 2. Summary of the RIE and ICP-RIE Conditions^a

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Ref.	Material	$n$	$n_{2}$ ( $m^{2} / W$ )	TPA Coefficient ( ${mW}^{- 1}$ )	Geometry	Dimensions ( ${μm}^{2}$ )	$γ$ ( $m^{- 1} \cdot W^{- 1}$ )	$α$ (dB/cm)	${FOM}_{α}$ [ $γ / α$ ] ( $W^{- 1}$ )	${FOM}_{TPA}$	DE^b at 1550 nm
[36]	${As}_{2} S_{3}$	2.37	$2.9 \times 10^{- 18}$	$6.2 \times 10^{- 15}$	Waveguide	$4 \times 2.6$	1.7	0.05	1.48	$> 300$	N
[37]	${As}_{2} S_{3}$	2.37	$3 \times 10^{- 18}$	$6.2 \times 10^{- 15}$	Waveguide	$2 \times 0.85$ (0.35 deep)	$\sim 10$ ^a	0.8	0.54	$> 300$	Y
[12]	${As}_{2} S_{3}$	2.43	$3 \times 10^{- 18}$	$6.2 \times 10^{- 15}$	Microring	$10 \times 1.3$ (30° slope angle)	/	$1.44 \times 10^{7} / 0.028$	/	$> 300$	N
[38]	${Ge}_{11.5} {As}_{24} {Se}_{64.5}$	2.66	$8.6 \times 10^{- 18}$	$10^{- 13}$	Waveguide	$0.63 \times 0.5$	136	2.6	2.27	60	Y
[26]	${Ge}_{23} {Sb}_{7} S_{70}$	2.15	$0.93 \times 10^{- 18}$ ^a	$10^{- 13}$	Waveguide/Microring	$0.8 \times 0.45$	10.47^a	0.5 (waveguide) $7.5 \times 10^{5}$ (ring)	0.91	6	N
[39]	${Ge}_{22} {Sb}_{18} {Se}_{60}$	2.74	$5.1 \times 10^{- 18}$	$4 \times 10^{- 13}$	Waveguide	$0.95 \times 0.4$	58	4	0.48	8.3	Y
This work	$A s_{2} S_{3}$	2.43	$3 \times 1 0^{- 18}$	$6.2 \times 1 0^{- 15}$	Waveguide/Microring	$2 \times 0 .8 5$	10	$0.1 (waveguide) / 1 .3 3 \times 1 0^{6} (r ing)$	4.34/2.41	$> 300$	Y