• High Power Laser and Particle Beams
  • Vol. 36, Issue 1, 013006 (2024)
Jinhao Zhang, Jiangtao Su*, Weiyu Xie, Shiyuan Shao, Kuiwen Xu, and Wenjun Li
Author Affiliations
  • Zhejiang Key Laboratory of Large-Scale Integrated Circuit Design, Hangzhou Dianzi University, Hangzhou 310018, China
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    DOI: 10.11884/HPLPB202436.230214 Cite this Article
    Jinhao Zhang, Jiangtao Su, Weiyu Xie, Shiyuan Shao, Kuiwen Xu, Wenjun Li. Load mismatch effects to heterojunction bipolar transistor device based on waveform measurement[J]. High Power Laser and Particle Beams, 2024, 36(1): 013006 Copy Citation Text show less
    References

    [1] Xie Bin, Liu Jie, Wang Bo, . Research on strong electromagnetic pulse protection technology[J]. Fire Control Radar Technology, 49, 111-115(2020).

    [2] Jiang Gang, Yan Meng. Research on electromagic pulse protection technology of phased array radar[C]Proceedings of the 2021 National Microwave Millimeter Wave Conference (Volume 1). 2021: 3

    [3] Laribi H, Dehkhoda P, Tavakoli A, et al. Susceptibility analysis of a lownoise amplifier against an electromagic pulse[J]. IET Science, Measurement & Technology, 2020, 14(10): 10441048.

    [4] Zhao Siyuan, Pan Tao, Su Jiangtao. A realtime wavefm loadpull technique enabling the access to RF PA ruggedness[C]2021 IEEE International Wkshop on Electromagics: Applications Student Innovation Competition (iWEM). 2021: 13.

    [5] Loescher D, Tasker P, Cripps S. Using wavefm engineering to underst the impact of harmonic terminations during 5: 1 VSWR stress tests[C]2016 IEEE Topical Conference on Power Amplifiers f Wireless Radio Applications (PAWR). 2016: 4952.

    [6] Zhang Meng. Unilateral power gain of heterojunction bipolar transist[D]. Hangzhou: Zhejiang University, 2008

    [7] Deng Junxiong, Gudem P S, Larson L E, et al. A high average-efficiency SiGe HBT power amplifier for WCDMA handset applications[J]. IEEE Transactions on Microwave Theory and Techniques, 53, 529-537(2005).

    [8] Singhal S, Li T, Chaudhari A, et al. Reliability of large periphery GaN-on-Si HFETs[J]. Microelectronics Reliability, 46, 1247-1253(2006).

    [9] Chen Fan, Ma Ting, Tan Kaizhou, . Research on the breakdown characteristics of SiGe HBT with SBFL structure[J]. Microelectronics, 47, 433-436(2017).

    [10] Fmicone G, Boueri F, Burger J, et al. Analysis of bias effects on VSWR ruggedness in RF LDMOS f avionics applications[C]Microwave Integrated Circuit Conference. 2008: 2831.

    [11] McGenn W, Choi H, Lees J, et al. Development of a RF wavefm stress test procedure f GaN HFETs subjected to infinite VSWR sweeps[C]IEEEMTTS International Microwave Symposium Digest. 2012: 13.

    [12] Bengtsson O, Chevtchenko S, Chowdhary A, et al. VSWR testing of RFpower GaN transists[C]9th European Microwave Integrated Circuit Conference. 2014: 460463.

    [13] Zhang Shuo. Investigation of the destruction mechanism protection circuit of a low noise amplifier injected by high power microwave[D]. Shanghai: Shanghai Jiao Tong University, 2016

    [14] Chen J J, Gao G B, Chyi J I, et al. Breakdown behavior of GaAs/AlGaAs HBTs[J]. IEEE Transactions on Electron Devices, 36, 2165-2172(1989).

    [15] Wu Y F, Keller B P, Keller S, et al. Measured microwave power performance of AlGaN/GaN MODFET[J]. IEEE Electron Device Letters, 17, 455-457(1996).

    [16] Guo Tingming, Su Jiangtao, Liu Jun, . A Duplexer-based harmonic active load-pull measurement system[J]. Journal of Hangzhou Dianzi University (Natural Sciences), 40, 6-12(2020).

    [17] Jang H, Ko Y, Roblin P. Development of multiharmonic verification artifact for the LSNA and NVNA (MTT-11)[J]. IEEE Microwave Magazine, 14, 134-139(2013).

    [18] Su Jiangtao, Yang Baoguo, Gao Haijun, et al. A novel TRM calibration method f improvement of modelling accuracy at mmwave frequency[C]2018 IEEEMTTS International Microwave Symposium IMS. 2018: 13001303.

    [19] Lai Yurui. Deembedding research application of microwaveRF probes[D]. Chengdu: University of Electronic Science Technology of China, 2019

    Jinhao Zhang, Jiangtao Su, Weiyu Xie, Shiyuan Shao, Kuiwen Xu, Wenjun Li. Load mismatch effects to heterojunction bipolar transistor device based on waveform measurement[J]. High Power Laser and Particle Beams, 2024, 36(1): 013006
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