• High Power Laser and Particle Beams
  • Vol. 36, Issue 1, 013006 (2024)
Jinhao Zhang, Jiangtao Su*, Weiyu Xie, Shiyuan Shao, Kuiwen Xu, and Wenjun Li
Author Affiliations
  • Zhejiang Key Laboratory of Large-Scale Integrated Circuit Design, Hangzhou Dianzi University, Hangzhou 310018, China
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    DOI: 10.11884/HPLPB202436.230214 Cite this Article
    Jinhao Zhang, Jiangtao Su, Weiyu Xie, Shiyuan Shao, Kuiwen Xu, Wenjun Li. Load mismatch effects to heterojunction bipolar transistor device based on waveform measurement[J]. High Power Laser and Particle Beams, 2024, 36(1): 013006 Copy Citation Text show less
    Block diagram of load mismatch measurement system
    Fig. 1. Block diagram of load mismatch measurement system
    Photograph of real-time load pull measurement system
    Fig. 2. Photograph of real-time load pull measurement system
    Parasitic model and comparison about deembedding
    Fig. 3. Parasitic model and comparison about deembedding
    Power sweep under optimal load impedance
    Fig. 4. Power sweep under optimal load impedance
    Locations of impedance point for ruggedness test
    Fig. 5. Locations of impedance point for ruggedness test
    Characteristic of HBT under 2nd harmonic load mismatch
    Fig. 6. Characteristic of HBT under 2nd harmonic load mismatch
    RF I-V characteristic of HBT under fundamental load mismatch
    Fig. 7. RF I-V characteristic of HBT under fundamental load mismatch
    DLLs of fundamental and 2nd harmonic ruggedness
    Fig. 8. DLLs of fundamental and 2nd harmonic ruggedness
    Jinhao Zhang, Jiangtao Su, Weiyu Xie, Shiyuan Shao, Kuiwen Xu, Wenjun Li. Load mismatch effects to heterojunction bipolar transistor device based on waveform measurement[J]. High Power Laser and Particle Beams, 2024, 36(1): 013006
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