Researching | Ultrasensitive and broad-spectrum photodetectors based on InSe/MoTe2 heterostructure

Journals >Journal of Infrared and Millimeter Waves >Volume 43 >Issue 3 >Page 314 > Article

Journal of Infrared and Millimeter Waves
Vol. 43, Issue 3, 314 (2024)

Ultrasensitive and broad-spectrum photodetectors based on InSe/MoTe₂ heterostructure

Yan-Hui XING^1、*, Wen-Xin HE^1、3, Zi-Shuo HAN¹, Bao-Lu GUAN¹, Hai-Xin MA^1、3, Xiao-Hui MA², Jun HAN¹, Wen-Hua SHI³, Bao-Shun ZHANG³, Wei-Ming LYU^3、**, and Zhong-Ming ZENG³

Author Affiliations

¹Key Laboratory of Opto-electronics Technology，Ministry of Education，College of Microelectronics，Beijing University of Technology，Beijing 100124，China

²State key Laboratory of High Power semiconductor laser of Changchun University of Science and Technology，Changchun 130022，China

³Nanofabrication facility，Suzhou Institute of Nano-Tech and Nano-Bionics，Chinese Academy of Sciences，Suzhou 215123，China

show less

DOI: 10.11972/j.issn.1001-9014.2024.03.004 Cite this Article

Yan-Hui XING, Wen-Xin HE, Zi-Shuo HAN, Bao-Lu GUAN, Hai-Xin MA, Xiao-Hui MA, Jun HAN, Wen-Hua SHI, Bao-Shun ZHANG, Wei-Ming LYU, Zhong-Ming ZENG. Ultrasensitive and broad-spectrum photodetectors based on InSe/MoTe₂ heterostructure[J]. Journal of Infrared and Millimeter Waves, 2024, 43(3): 314 Copy Citation Text

show less

References

[1] M Long, P Wang, H Fang et al. Progress, Challenges, and Opportunities for 2D Material Based Photodetectors. Advanced Functional Materials, 29, 1803807(2019).

[2] D Akinwande, C Huyghebaert, C-H Wang et al. Graphene and two-dimensional materials for silicon technology. Nature, 573, 507-518(2019).

[3] D De Fazio, I Goykhman, D Yoon et al. High Responsivity, Large-Area Graphene/MoS2 Flexible Photodetectors. ACS nano, 10, 8252-8262(2016).

[4] W Zhang, M-H Chiu, C-H Chen et al. Role of metal contacts in high-performance phototransistors based on WSe2 monolayers. ACS nano, 8, 8653-8661(2014).

[5] S H Yu, Y Lee, S K Jang et al. Dye-sensitized MoS2 photodetector with enhanced spectral photoresponse. ACS nano, 8, 8285-8291(2014).

[6] Y Wang, E Liu, A Gao et al. Negative Photoconductance in van der Waals Heterostructure-Based Floating Gate Phototransistor. ACS nano, 12, 9513-9520(2018).

[7] Z Hu, P L Hernández-Martínez, X Liu et al. Trion-Mediated Förster Resonance Energy Transfer and Optical Gating Effect in WS2/hBN/MoSe2 Heterojunction. ACS nano, 14, 13470-13477(2020).

[8] W S Yun, S Han, S C Hong et al. Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2 semiconductors (M= Mo, W; X= S, Se, Te). Phys. Rev. B, 85, 033305(2012).

[9] C Ruppert, O B Aslan, T Heinz. Optical Properties and Band Gap of Single- and Few-Layer MoTe2 Crystals. Nano letters, 14, 6231-6236(2014).

[10] D H Keum, S Cho, J H Kim et al. Bandgap opening in few-layered monoclinic MoTe2. Nature Physics, Nature Publishing Group, 11, 482-486(2015).

[11] L Yin, X Zhan, K Xu et al. Ultrahigh sensitive MoTe2 phototransistors driven by carrier tunneling. Applied Physics Letters, 108, 043503(2016).

[12] A Pezeshki, S H H Shokouh, T Nazari et al. Electric and Photovoltaic Behavior of a Few-Layer α-MoTe2 /MoS2 Dichalcogenide Heterojunction. Advanced Materials, 28, 3216-3222(2016).

[13] J Xu, Y J Song, J-H Park et al. Graphene/black phosphorus heterostructured photodetector. Solid-State Electronics, 144, 86-89(2018).

[14] W Chen, R Liang, S Zhang et al. Ultrahigh sensitive near-infrared photodetectors based on MoTe2/germanium heterostructure. Nano Research, 13, 127-132(2020).

[15] H Huang, J Wang, W Hu et al. Highly sensitive visible to infrared MoTe2 photodetectors enhanced by the photogating effect. Nanotechnology, IOP Publishing, 27, 445201(2016).

[16] S Lei, F Wen, L Ge et al. An Atomically Layered InSe Avalanche Photodetector. Nano Letters, American Chemical Society, 15, 3048-3055(2015).

[17] W Luo, Y Cao, P Hu et al. Gate Tuning of High-Performance InSe-Based Photodetectors Using Graphene Electrodes. Advanced Optical Materials, 3, 1418-1423(2015).

[18] G W Mudd, S A Svatek, L Hague et al. High Broad-Band Photoresponsivity of Mechanically Formed InSe–Graphene van der Waals Heterostructures. Advanced Materials, 27, 3760-3766(2015).

[19] Y Sun, W Gao, X Li et al. Anti-ambipolar behavior and photovoltaic effect in p-MoTe2/n-InSe heterojunctions. Journal of Materials Chemistry C, The Royal Society of Chemistry, 9, 10372-10380(2021).

[20] F Yan, L Zhao, A Patanè et al. Fast multicolor photodetectors based on graphene-contacted p-GaSe/n-InSe van der Waals heterostructures. Nanotechnology, 28, 27LT01(2017).

[21] M Dai, H Chen, F Wang et al. Ultrafast and Sensitive Self-Powered Photodetector Featuring Self-Limited Depletion Region and Fully Depleted Channel with van der Waals Contacts. ACS nano, 14, 9098-9106(2020).

[22] J-J Tao, J Jiang, S-N Zhao et al. Fabrication of 1D Te/2D ReS2 Mixed-Dimensional van der Waals p-n Heterojunction for High-Performance Phototransistor. ACS nano, 15, 3241-3250(2021).

[23] B Kang, Y Kim, W J Yoo et al. Ultrahigh Photoresponsive Device Based on ReS2 /Graphene Heterostructure. Small, 14, e1802593(2018).

[24] L Tu, R Cao, X Wang et al. Ultrasensitive negative capacitance phototransistors. Nature Communications, 11, 101(2020).

[25] Y Yan, G Abbas, F Li et al. Self-Driven High Performance Broadband Photodetector Based on SnSe/InSe van der Waals Heterojunction. Advanced Materials Interfaces, 9, 2102068(2022).

[26] Y Zhang, S Li, Z Li et al. High-Performance Two-Dimensional Perovskite Ca2Nb3O10UV Photodetectors. Nano Letters, 21, 382-388(2021).

[27] H Ma, Y Xing, J Han et al. Ultrasensitive and Broad‐Spectrum Photodetectors Based on InSe/ReS2 Heterostructure. Advanced Optical Materials, 10, 2101772(2022).

[28] J-H Huang, H-H Hsu, D Wang et al. Polymorphism Control of Layered MoTe2 through Two-Dimensional Solid-Phase Crystallization. Scientific Reports, 9, 8810(2019).

[29] S Das, H-Y Chen, A V Penumatcha et al. High Performance Multilayer MoS2 Transistors with Scandium Contacts. Nano Letters, 13, 100-105(2013).

[30] N Huo, G Konstantatos. Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction. Nature Communications, 8, 572(2017).

[31] Y Sun, W Song, F Gao et al. In Situ Conformal Coating of Polyaniline on GaN Microwires for Ultrafast, Self-Driven Heterojunction Ultraviolet Photodetectors. ACS Applied Materials & Interfaces, 12, 13473-13480(2020).

[32] K Zhang, M Peng, A Yu et al. A substrate-enhanced MoS2 photodetector through a dualphotogating effect. Materials Horizons, 6, 826-833(2019).

[33] J Xu, K Rechav, R Popovitz-Biro et al. High-Gain 200 ns Photodetectors from Self-Aligned CdS-CdSe Core-Shell Nanowalls. Advanced Materials, 30, e1800413(2018).

[34] R Cao, H Wang, Z Guo et al. Black Phosphorous/Indium Selenide Photoconductive Detector for Visible and Near‐Infrared Light with High Sensitivity. Advanced Optical Materials, 7, 1900020(2019).

[35] C Lan, C Li, S Wang et al. High responsive and broadband photodetectors based on WS2-graphene van der Waals epitaxial heterostructures. J. Mater. Chem. C, 5, 1494-1500(2017).

[36] D Zhao, Y Chen, W Jiang et al. Gate-Tunable Photodiodes Based on Mixed-Dimensional Te/MoTe2 Van der Waals Heterojunctions. Advanced Electronic Materials, 7, 2001066(2021).

[37] G Shin, C Park, K Lee et al. Ultrasensitive Phototransistor Based on WSe2-MoS2 van der Waals Heterojunction. Nano Letters, 20, 5741-5748(2020).

[38] K Thakar, B Mukherjee, S Grover et al. Multilayer ReS2 Photodetectors with Gate Tunability for High Responsivity and High-Speed Applications. ACS applied materials & interfaces, 10, 36512-36522(2018).

[39] B Mukherjee, M A Zulkefli, R Hayakawa et al. Enhanced Quantum Efficiency in Vertical Mixed-thickness n-ReS2/p-Si Heterojunction Photodiodes. ACS Photonics, 6, 2277-2286(2019).

Figures&Tables (6)

References (39)

Copy Citation Text

Yan-Hui XING, Wen-Xin HE, Zi-Shuo HAN, Bao-Lu GUAN, Hai-Xin MA, Xiao-Hui MA, Jun HAN, Wen-Hua SHI, Bao-Shun ZHANG, Wei-Ming LYU, Zhong-Ming ZENG. Ultrasensitive and broad-spectrum photodetectors based on InSe/MoTe₂ heterostructure[J]. Journal of Infrared and Millimeter Waves, 2024, 43(3): 314

Download Citation

Save the article for my favorites

Paper Information

Recommended Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology

Set citation alerts for the article

Please enter your email address