Huygens metasurfaces have demonstrated remarkable potential in perfect transmission and precise wavefront modulation through the synergistic integration of electric resonance and magnetic resonance. However, prevailing active or reconfigurable Huygens metasurfaces, based on all-optical systems, encounter formidable challenges associated with the intricate control of bulk dielectric using laser equipment and the presence of residual thermal effects, leading to limitations in continuous modulation speeds. Here, we present an ultrafast electrically driven terahertz Huygens metasurface that comprises an artificial microstructure layer featuring a two-dimensional electron gas (2DEG) provided by an AlGaN/GaN heterojunction, as well as a passive microstructure layer. Through precise manipulation of the carrier concentration within the 2DEG layer, we effectively govern the current distribution on the metasurfaces, inducing variations in electromagnetic resonance modes to modulate terahertz waves. This modulation mechanism achieves high efficiency and contrast for terahertz wave manipulation. Experimental investigations demonstrate continuous modulation capabilities of up to 6 GHz, a modulation efficiency of 90%, a transmission of 91%, and a remarkable relative operating bandwidth of 55.5%. These significant advancements substantially enhance the performance of terahertz metasurface modulators. Importantly, our work not only enables efficient amplitude modulation but also introduces an approach for the development of high-speed and efficient intelligent transmissive metasurfaces.