• Journal of Inorganic Materials
  • Vol. 38, Issue 3, 335 (2023)
Yanlei SHI1、2, Niefeng SUN2、*, Chengyan XU1, Shujie WANG2, Peng LIN2, Chunlei MA2, Senfeng XU2, Wei WANG2, Chunmei CHEN2, Lijie FU2, Huimin SHAO2, Xiaolan LI2, Yang WANG2, and Jingkai QIN1、*
Author Affiliations
  • 11. Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
  • 22. National Key Laboratory of ASIC, The 13th Research Institute of China Electronic Technology Group Corporation, Shijiazhuang 050051, China
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    DOI: 10.15541/jim20220645 Cite this Article
    Yanlei SHI, Niefeng SUN, Chengyan XU, Shujie WANG, Peng LIN, Chunlei MA, Senfeng XU, Wei WANG, Chunmei CHEN, Lijie FU, Huimin SHAO, Xiaolan LI, Yang WANG, Jingkai QIN. Thermal Field of 6-inch Indium Phosphide Single Crystal Growth by Semi-sealed Czochralski Method[J]. Journal of Inorganic Materials, 2023, 38(3): 335 Copy Citation Text show less
    Schematic of the processes of semi-sealed Czochralski method(a) Seeding and shoulder stage; (b) Diameter-controlling stage; (c) Crystal raised from the melt
    1. Schematic of the processes of semi-sealed Czochralski method(a) Seeding and shoulder stage; (b) Diameter-controlling stage; (c) Crystal raised from the melt
    Thermal field distributions in the seeding stages with different methods(a) SSC method; (b) VCZ method; (c) LEC method
    2. Thermal field distributions in the seeding stages with different methods(a) SSC method; (b) VCZ method; (c) LEC method
    Temperature distribution in the melt at the front of the solid-liquid interface(a) Sampling position in the melt; (b) Temperature distribution in the melt at the front of solid-liquid interface; (c) Schematic of heat flow in VCZ method
    3. Temperature distribution in the melt at the front of the solid-liquid interface(a) Sampling position in the melt; (b) Temperature distribution in the melt at the front of solid-liquid interface; (c) Schematic of heat flow in VCZ method
    Temperature distribution in the crystal(a) Schematic diagram of the temperature sampling points in the crystal; (b) Temperature distribution in the crystal from the solid-liquid interface to the seed-crystal interface
    4. Temperature distribution in the crystal(a) Schematic diagram of the temperature sampling points in the crystal; (b) Temperature distribution in the crystal from the solid-liquid interface to the seed-crystal interface
    Temperature distribution in the melt, B2O3 and atmosphere around the crystal(a) Location of sampling points; (b) Comparison of temperature distributions by using different methods
    5. Temperature distribution in the melt, B2O3 and atmosphere around the crystal(a) Location of sampling points; (b) Comparison of temperature distributions by using different methods
    Digital photographs of 6-inch InP crystal and cutting wafer(a) LEC-grown InP crystal; (b) SSC-grown InP crystal; (c) Cracked cutting wafer of LEC-grown crystal
    6. Digital photographs of 6-inch InP crystal and cutting wafer(a) LEC-grown InP crystal; (b) SSC-grown InP crystal; (c) Cracked cutting wafer of LEC-grown crystal
    Dislocation densities of crystal tails by LEC and SSC methods(a) Crystal dislocation density by LEC method; (b) Crystal dislocation density by SSC method
    7. Dislocation densities of crystal tails by LEC and SSC methods(a) Crystal dislocation density by LEC method; (b) Crystal dislocation density by SSC method
    MethodItemMeltB2O3Gas 1Gas 2Gas 3
    NodeStart pointNode 1Node 2Node 3Node 4End point
    Distance/mm0.011.052.055.070.076.0
    SSCTemperature/K1340.01338.11221.41190.71185.81148.4
    Temperature gradient/(K·mm-1)-0.2-2.8-10.2-0.3-6.2
    LECTemperature/K1344.51340.31127.6877.7808.7644.4
    Temperature gradient/(K·mm-1)-0.4-5.2-62.5-6.9-16.4
    Table 1.

    Location, temperature and temperature gradient of each section

    Yanlei SHI, Niefeng SUN, Chengyan XU, Shujie WANG, Peng LIN, Chunlei MA, Senfeng XU, Wei WANG, Chunmei CHEN, Lijie FU, Huimin SHAO, Xiaolan LI, Yang WANG, Jingkai QIN. Thermal Field of 6-inch Indium Phosphide Single Crystal Growth by Semi-sealed Czochralski Method[J]. Journal of Inorganic Materials, 2023, 38(3): 335
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