• Optoelectronic Technology
  • Vol. 42, Issue 4, 280 (2022)
Xinyue ZHANG, Rui LI, and Xiangchen CUI
Author Affiliations
  • School of Optoelectronic Engineering and Instrumentation Science, Dalian University of Technology, Dalian Liaoning 116024, CHN
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    DOI: 10.19453/j.cnki.1005-488x.2022.04.006 Cite this Article
    Xinyue ZHANG, Rui LI, Xiangchen CUI. Study on the Polarization-dependence Resonance Raman Spectra of MoS2 Flakes[J]. Optoelectronic Technology, 2022, 42(4): 280 Copy Citation Text show less

    Abstract

    MoS2 nanosheets with the thickness of above 60 nm were prepared by mechanical stripping, a traditional two-dimensional material preparation method. The morphology and thickness distribution of MoS2 flakes were observed by optical microscope and atomic force microscope, and a polarization Raman test system was built. According to the 1.8 eV bandgap of MoS2 flakes, 633 nm (1.96 eV) and 458 nm (2.71 eV) lasers were selected to excite the resonance and non-resonance Raman scattering of MoS2 flakes. The Raman scattering light was coupled into a spectroscope through optical fiber to obtain the Raman spectra, and the characteristic modes in the resonance Raman spectrum were determined by Lorentz fitting. By comparing with non-resonant Raman spectrum, it was found that the Raman spectrum of MoS2 could arouse a new Raman mode in resonant state.In addition, the resonance Raman spectra and polar coordinates at different polarization angles from 0° to 360° were observed. It was found that all the modes in the resonance Raman spectra were polarization-dependent, and the ways of polarization-dependence were similar. The theoretical model of Raman tensor was also combined with the experiment, and the fitted intensity curve could almost coincide with the data points.
    Xinyue ZHANG, Rui LI, Xiangchen CUI. Study on the Polarization-dependence Resonance Raman Spectra of MoS2 Flakes[J]. Optoelectronic Technology, 2022, 42(4): 280
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