• Journal of Inorganic Materials
  • Vol. 37, Issue 7, 724 (2022)
Cheng CHENG, Jianbo LI, Zhen TIAN, Pengjiang WANG, Huijun KANG*, and Tongmin WANG
Author Affiliations
  • Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
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    DOI: 10.15541/jim20210631 Cite this Article
    Cheng CHENG, Jianbo LI, Zhen TIAN, Pengjiang WANG, Huijun KANG, Tongmin WANG. Thermoelectric Property of In2O3/InNbO4 Composites [J]. Journal of Inorganic Materials, 2022, 37(7): 724 Copy Citation Text show less
    XRD patterns for (1-x)In2O3/xInNbO4 samples
    1. XRD patterns for (1-x)In2O3/xInNbO4 samples
    Matrix structure and composition of 0.998In2O3/ 0.002InNbO4
    2. Matrix structure and composition of 0.998In2O3/ 0.002InNbO4
    SEM images of (a) pure In2O3 powder, fracture surface for (1-x)In2O3/xInNbO4 (x=(b) 0, (c) 0.04), surface SEM images for (1-x)In2O3/xInNbO4 (x=0.002 (d), x=0.02 (e), x=0.04 (f)); (g-h) elemental distributions of Nb at high magnification for 0.96In2O3/0.04InNbO4
    3. SEM images of (a) pure In2O3 powder, fracture surface for (1-x)In2O3/xInNbO4 (x=(b) 0, (c) 0.04), surface SEM images for (1-x)In2O3/xInNbO4 (x=0.002 (d), x=0.02 (e), x=0.04 (f)); (g-h) elemental distributions of Nb at high magnification for 0.96In2O3/0.04InNbO4
    (a) XPS total survey and high-resolution XPS spectra of (b) Nb3d, (c) In3d and (d) O1s core-level regions for 0.96In2O3/0.04InNbO4 sample
    4. (a) XPS total survey and high-resolution XPS spectra of (b) Nb3d, (c) In3d and (d) O1s core-level regions for 0.96In2O3/0.04InNbO4 sample
    Temperature dependence of electrical carrier concentrations and mobilities of (1-x)In2O3/xInNbO4(x=0, 0.002)
    5. Temperature dependence of electrical carrier concentrations and mobilities of (1-x)In2O3/xInNbO4(x=0, 0.002)
    Temperature dependence of (a) electrical conductivities, (b) Seebeck coefficients and (c) power factors of (1-x)In2O3/xInNbO4, In1.76(Zn0.12Ge0.12)O3[33] and In1.88V0.12O3[34]
    6. Temperature dependence of (a) electrical conductivities, (b) Seebeck coefficients and (c) power factors of (1-x)In2O3/xInNbO4, In1.76(Zn0.12Ge0.12)O3[33] and In1.88V0.12O3[34]
    Temperature dependence of (a) total thermal conductivity, (b) electronic thermal conductivity and (c) lattice thermal conductivity of (1-x)In2O3/xInNbO4, In1.76(Zn0.12Ge0.12)O3[33] and In1.88V0.12O3[34]
    7. Temperature dependence of (a) total thermal conductivity, (b) electronic thermal conductivity and (c) lattice thermal conductivity of (1-x)In2O3/xInNbO4, In1.76(Zn0.12Ge0.12)O3[33] and In1.88V0.12O3[34]
    Temperature dependence of ZT for (1-x)In2O3/xInNbO4, In1.76(Zn0.12Ge0.12)O3[33] and In1.88V0.12O3[34]
    8. Temperature dependence of ZT for (1-x)In2O3/xInNbO4, In1.76(Zn0.12Ge0.12)O3[33] and In1.88V0.12O3[34]
    (1-x)In2O3/xInNbO4ρm/(g·cm-3) ρth/(g·cm-3) ρr/% n/(×1019, cm-3) μ/(cm2·V-1·s-1)
    x=0 6.9697.12097.90.4694.26
    x=0.002 7.0167.11998.60.7876.22
    x=0.006 6.8117.11795.75.9038.21
    x=0.01 6.6587.11693.69.8038.43
    x=0.02 6.5987.11292.820.8840.22
    x=0.04 6.5477.10092.245.2439.86
    Table 1. Measured densities(ρm), theoretical densities(ρth), relative densities (ρr), carrier concentrations (n) and carrier mobilities (μ) of (1-x)In2O3/xInNbO4 samples at room temperature
    Cheng CHENG, Jianbo LI, Zhen TIAN, Pengjiang WANG, Huijun KANG, Tongmin WANG. Thermoelectric Property of In2O3/InNbO4 Composites [J]. Journal of Inorganic Materials, 2022, 37(7): 724
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