The Sn prefabricated layer was evaporated by electron beam and then selenized by Se powder, then SnSe films were successfully prepared on the glass substrate by adjusting the selenation temperature and annealing time. The phase, microstructure and optical properties of SnSe films were studied by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and UV-Vis-NIR spectrophotometer. The results show that the pure phase polycrystalline SnSe films with a band gap of 0.93eV can be prepared by annealing selenide for 60min at 450℃. Under the irradiation of a 980nm laser with a power of 200mW/cm2, the photoelectric response characteristics of SnSe film were tested, and the response time and recovery time of the prepared film were 62ms and 80ms, respectively, obtaining through curve simulation.