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    Journals >Chinese Journal of Lasers >Volume 17 >Issue s1 >Page 175 > Article
    • Chinese Journal of Lasers
    • Vol. 17, Issue s1, 175 (1990)
    Si/Pd/GaAs Ohmic contacts formed by laser annealing
    Fang Fang1 and S. S. Lau2
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  • 1[in Chinese]
  • 2[in Chinese]
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    Fang Fang, S. S. Lau. Si/Pd/GaAs Ohmic contacts formed by laser annealing[J]. Chinese Journal of Lasers, 1990, 17(s1): 175 Copy Citation Text show less

    Abstract

    A non-alloying, stable Ohmie contacts on Si/Pd/GaAs were obtained. A specific contact resistivity of 2.75×10-6Ω·cm2 on 6.7×1017cm-3 substrates can be achieved after Ar+ laser annealing. The thermal stability is satisfactory for those annealed at 410℃ for about 8 hours in flowing forming gas.

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    Fang Fang, S. S. Lau. Si/Pd/GaAs Ohmic contacts formed by laser annealing[J]. Chinese Journal of Lasers, 1990, 17(s1): 175
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