Rongzhan LIU. Study on volume Bragg grating external cavity second harmonic generation semiconductor laser[J]. Optical Instruments, 2024, 46(2): 36
- Optical Instruments
- Vol. 46, Issue 2, 36 (2024)
Fig. 1. Structure of a VBG external cavity second harmonic generation semiconductor laser
Fig. 2. Power characteristics of semiconductor lasers during free emission
Fig. 3. Spectral characteristics of semiconductor lasers under free emission at different temperatures
Fig. 4. Spectral characteristics of semiconductor lasers under free emission at 28 ℃
Fig. 5. Far-field spot of semiconductor lasers at different temperatures and currents for free emission
Fig. 6. Power characteristics of second harmonic generation in the semiconductor lasers during free emission
Fig. 7. Spectral characteristics of second harmonic generation in the semiconductor laser under free emission at different temperatures
Fig. 8. Spectral characteristics of second harmonic generation in the semiconductor laser at 28 ℃ free emission
Fig. 9. Power characteristics of a VBG external cavity semiconductor laser with a diffraction bandwidth of 0.3 nm
Fig. 10. Spectral characteristics of a VBG external cavity semiconductor laser with a diffraction bandwidth of 0.3 nm at different temperatures
Fig. 11. Far-field spot of a VBG external cavity semiconductor laser with a reflection bandwidth of 0.3 nm at different temperatures and currents
Fig. 12. Power characteristics of second harmonic generation in a 0.3 nm diffraction bandwidth VBG external cavity semiconductor laser
Fig. 13. Spectral characteristics of second harmonic generation in a 0.3 nm VBG external cavity semiconductor laser at different temperatures
Fig. 14. Spectral characteristics of second harmonic generation in a 28 ℃ diffraction bandwidth of 0.3 nm VBG external cavity semiconductor laser
Fig. 15. Output characteristics of a VBG external cavity semiconductor laser with a diffraction bandwidth of 0.1 nm
Fig. 16. Spectral characteristics of a VBG external cavity semiconductor laser with a diffraction bandwidth of 0.1 nm at different temperatures
Fig. 17. Far-field spot of a VBG external cavity semiconductor laser with a reflection bandwidth of 0.1 nm at different temperatures and currents
Fig. 18. Power characteristics of second harmonic generation in a 0.1nm diffraction bandwidth VBG external cavity semiconductor laser
Fig. 19. Spectral characteristics of second harmonic generation in a 0.1 nm VBG external cavity semiconductor laser at different temperatures
Fig. 20. Spectral characteristics of second harmonic generation in a 28 ℃ diffraction bandwidth of 0.1 nm VBG external cavity semiconductor laser
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Table 1. Parameters of VBG
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