In recent years, N-type crystalline silicon solar cells have attracted much attention in the field of high efficiency and low cost solar cell due to its great advantages, such as long minority carrier lifetime, low light-induced degradation and good low-light response. PC1D simulation is used to analyze the back emitter N-type crystalline silicon solar cells. The results show that back emitter doping concentration, junction depth, back surface recombination velocity, front surface field doping concentration and front surface recombination velocity have a greater impact on the cell conversion efficiency, and especially the front and back surface recombination velocity are the most. But the front surface field doping depth has less affect on the performance of the cell. For the front surface recombination, when the surface recombination velocity is less than 1×103 cm/s, there is a small affect on the performance of the cell, but when the surface recombination velocity is greater than 1×103 cm/s, the conversion efficiency of the cell decreases rapidly. The effects of back surface recombination on cell efficiency is even more obvious when the back surface recombination velocity is greater than 1×104 cm/s, the conversion efficiency of the cell arises a sharp decline. As the back surface recombination velocity increases to 1×106 cm/s, the efficiency of the cell drops to less than 5%. In a low back surface recombination velocity range (10~103 cm/s), the cell can obtain high conversion efficiency.