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Journals >Journal of Inorganic Materials >Volume 38 >Issue 3 >Page 343 > Article

Journal of Inorganic Materials
Vol. 38, Issue 3, 343 (2023)

Effect of High-temperature Annealing on AlN Crystal Grown by PVT Method

Ruixian YU, Guodong WANG, Shouzhi WANG, Xiaobo HU^*, Xiangang XU, and Lei ZHANG^*

Author Affiliations

The State Key Laboratory of Crystal Materials, Shandong University, Institute of Novel Semiconductors, Shenzhen Research Institute of Shandong University, Shandong University, Jinan 250100, China

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DOI: 10.15541/jim20220481 Cite this Article

Ruixian YU, Guodong WANG, Shouzhi WANG, Xiaobo HU, Xiangang XU, Lei ZHANG. Effect of High-temperature Annealing on AlN Crystal Grown by PVT Method[J]. Journal of Inorganic Materials, 2023, 38(3): 343 Copy Citation Text

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References

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[3] R X YU, C M CHEN, L ZHANG et al. Influence of different heater structures on the temperature field of AlN crystal growth by resistance heating. Materials, 14:, 7441(2021).

[4] W ZHENG, F HUANG, R S ZHENG et al. Low-dimensional structure vacuum-ultraviolet-sensitive (λ<200 nm) photodetector with fast-response speed based on high-quality AlN micro/ nanowire. Adv. Mater., 27:, 3921(2015).

[5] Z L CHEN, Z Q LIU, T B WEI et al. Improved epitaxy of AlN film for deep-ultraviolet light-emitting diodes enabled by graphene. Adv. Mater., 31:, 1807345(2019).

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[7] X H LIU, J C ZHANG, X J SU et al. Fabrication of crack-free AlN film on sapphire by hydride vapor phase epitaxy using an in situ etching method. Appl. Phys. Exp., 9:, 045501(2016).

[8] Y KATAGIRI, S KISHINO, K OKUURA et al. Low-pressure HVPE growth of crack-free thick AlN on a trench-patterned AlN template. J. Cryst. Growth, 311:, 2831(2009).

[9] C HARTMANN, A DITTMAR, J WOLLWEBER et al. Bulk AlN growth by physical vapor transport. Semicond. Sci. Technol., 29:, 084002(2014).

[10] D ZHUANG, Z G HERRO, R SCHLEAAER et al. Seeded growth of AlN single crystals by physical vapor transport. J. Cryst. Growth, 287:, 372(2006).

[11] C GUGUSCHEV, A DITTMAR, E MOUKHINA et al. Growth of bulk AlN single crystals with low oxygen content taking into account thermal and kinetic effects of oxygen-related gaseous species. J. Cryst. Growth, 360:, 185(2012).

[12] Y TANIYASU, M KASU, T MAKIMOTO. Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100 cm²·V^-1·s^-1). Appl. Phys. Lett., 4672.

[13] M STRASSBURG, J SENAWIRATNE, N DIETZ. The growth and optical properties of large, high-quality AlN single crystals. J. Appl. Phys., 96:, 5870(2004).

[14] C HARTMANN, J WOLLWEBER, A DITTMAR et al. Preparation of bulk AlN seeds by spontaneous nucleation of freestanding crystals. Jpn. J. Appl. Phys., 52:, 08JA06(2013).

[15] G D WANG, L ZHANG, Y WANG et al. Effect of temperature gradient on AlN crystal growth by physical vapor transport method. Cryst. Growth Des., 19:, 6736(2019).

[16] P MOTAMEDI, K CADIEN. Structural and optical characterization of low-temperature ALD crystalline AlN. J. Cryst. Growth, 421:, 45(2015).

[17] C HARTMANN, L MATIWE, J WOLLWEBER et al. Favorable growth conditions for the preparation of bulk AlN single crystals by PVT. CrystEngComm, 22:, 1762(2020).

[18] R COLLAZO, J XIE, B GADDY et al. On the origin of the 265 nm absorption band in AlN bulk crystals. Appl. Phys. Lett., 100:, 191914(2012).

[19] B E GADDY, Z BRYAN, I BRYAN et al. The role of the carbon- silicon complex in eliminating deep ultraviolet absorption in AlN. Appl. Phys. Lett., 104:, 202106(2014).

[20] L ZHAO, K YANG, Y J AI et al. Crystal quality improvement of sputtered AlN film on sapphire substrate by high-temperature annealing. J. Mater. Sci.: Mater. Electron., 29:, 13766(2018).

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Ruixian YU, Guodong WANG, Shouzhi WANG, Xiaobo HU, Xiangang XU, Lei ZHANG. Effect of High-temperature Annealing on AlN Crystal Grown by PVT Method[J]. Journal of Inorganic Materials, 2023, 38(3): 343

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