Research on shutdown characteristics of thyristor reverse parallel diodes

Tao Li; Xingru Zhang; Mengbing He; Jun Liu; Bingyang Feng

doi:10.11884/HPLPB202133.200239

Journals >High Power Laser and Particle Beams >Volume 33 >Issue 4 >Page 045002 > Article

High Power Laser and Particle Beams
Vol. 33, Issue 4, 045002 (2021)

Research on shutdown characteristics of thyristor reverse parallel diodes

Tao Li¹, Xingru Zhang^2、*, Mengbing He², Jun Liu², and Bingyang Feng²

Author Affiliations

¹Institute of Applied Electronics, CAEP, Mianyang 621900, China

²State Key Laboratory of Advanced Electromagnetic Engineering and New Technology, Huazhong University of Science and Technology, Wuhan 430074, China

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DOI: 10.11884/HPLPB202133.200239 Cite this Article

Tao Li, Xingru Zhang, Mengbing He, Jun Liu, Bingyang Feng. Research on shutdown characteristics of thyristor reverse parallel diodes[J]. High Power Laser and Particle Beams, 2021, 33(4): 045002 Copy Citation Text

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References

[6] Shammas N Y A, Rahimo M T, Hoban P T. Effects of external operating conditions on the reverse recovery behaviour of fast power diodes[J]. EPE Journal, 8, 11-18(1999).

[8] Matteson F M, Ruhl H J, Shafer P O, et al. The recovered charge characteristics of high power thyristors[J]. IEEE Transactions on Industry Applications, IA-12, 305-311(1976).

[11] Lee C W, Park S B. Design of a thyristor snubber circuit by considering the reverse recovery process[J]. IEEE Transactions on Power Electronics, 3, 440-446(1988).

[14] Chokhawala R S, Carroll E I. A snubber design tool for P-N junction reverse recovery using a more accurate simulation of the reverse recovery waveform[J]. IEEE Transactions on Industry Applications, 27, 74-84(1991).

Tao Li, Xingru Zhang, Mengbing He, Jun Liu, Bingyang Feng. Research on shutdown characteristics of thyristor reverse parallel diodes[J]. High Power Laser and Particle Beams, 2021, 33(4): 045002

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