• Optoelectronic Technology
  • Vol. 43, Issue 4, 298 (2023)
Wenzhu WU, Ranran HAN, Zengzhou YANG, Jinchen HAN, Zhijie XIA, Hong ZHAO, Xin YAO, Qianming DONG, and Zugang LIU*
Author Affiliations
  • College of Optical and Electronic Technology,China Jiliang University, Hangzhou 310018, CHN
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    DOI: 10.19453/j.cnki.1005-488x.2023.04.004 Cite this Article
    Wenzhu WU, Ranran HAN, Zengzhou YANG, Jinchen HAN, Zhijie XIA, Hong ZHAO, Xin YAO, Qianming DONG, Zugang LIU. Regulation of Copper Content and Simulation of CIGSSe Solar Cells Prepared by Nanoparticles Ink Method[J]. Optoelectronic Technology, 2023, 43(4): 298 Copy Citation Text show less
    The synthesis route of nanoparticles
    Fig. 1. The synthesis route of nanoparticles
    Schematic of the device structure
    Fig. 2. Schematic of the device structure
    The SEM images of the surface of absorption layers of CIGSSe films prepared with different CGI nanoparticles ink
    Fig. 3. The SEM images of the surface of absorption layers of CIGSSe films prepared with different CGI nanoparticles ink
    The Hall Effect test results of CIGSSe absorption layers prepared from nanoparticles inks with different CGI
    Fig. 4. The Hall Effect test results of CIGSSe absorption layers prepared from nanoparticles inks with different CGI
    Raman spectra of absorption layer films prepared from the inks with different CGI
    Fig. 5. Raman spectra of absorption layer films prepared from the inks with different CGI
    The J-V curves of devices prepared from inks with different CGI
    Fig. 6. The J-V curves of devices prepared from inks with different CGI
    Simulated J‑V curves of the device with different CGI
    Fig. 7. Simulated J‑V curves of the device with different CGI
    Simulation results of carrier recombination rate of the devices with different CGI
    Fig. 8. Simulation results of carrier recombination rate of the devices with different CGI
    Simulation results of energy band distribution of the devices with different CGI
    Fig. 9. Simulation results of energy band distribution of the devices with different CGI
    参数ITOi‑ZnOCdSCIGS
    厚度 /μm0.30.030.051.5
    电子亲和势/eV4.434.44.24.5
    介电常数991013.6
    Nc 电子有效能级密度/(cm-33×10182.2×10182.2×10182.2×1018
    Nv 电子有效能级密度/(cm-31.7×10192.2×10182.2×10182.2×1019
    带隙 /eV3.33.32.41.15
    电子迁移率/(cm2·V-1s-1100100100100
    空穴迁移率/(cm2·V-1·s-1303025可调节
    Nd 施主缺陷浓度/(cm-31×10201×10201.1×10180
    Na 受主缺陷浓度/(cm-3000可调节
    Nt 缺陷态密度/(cm-31×10171×10171×10181×1015
    缺陷类型施主施主施主受主
    能级/eV1.651.651.20.6
    偏差/eV0.10.10.10.1
    捕获电子/cm21×10-121×10-121×10-175×10-13
    空穴浓度/cm21×10-151×10-151×10-121×10-15
    Table 1. Material parameters of functional layers of device
    CGICu Wt/(%)In Wt/(%)Ga Wt/(%)S Wt/(%)
    0.7716.4726.697.0316.40
    0.8915.2621.495.6815.94
    1.0318.1622.095.8818.12
    1.1417.0418.744.9817.86
    1.2219.7320.465.2820.53
    Table 2. The ICP results of nanoparticles
    CGI开路电压 /mV短路电流密度 /(A·cm-2)填充因子 /(%)转换效率/ (%)
    0.77465.5828.3656.777.05
    0.89505.9834.1651.997.56
    1.03479.9635.4459.3110.09
    1.14512.5228.8254.608.11
    Table 3. The JV parameters of devices prepared from the inks with different CGI
    CGI空穴浓度/(cm-3)空穴迁移率/ (cm2·V-1·s-1)
    0.773.2×10160.92
    0.898.5×10160.44
    1.038.2×10160.75
    1.141.2×10170.50
    Table 4. Hole concentration and mobility of absorber films prepared with different CGI
    Wenzhu WU, Ranran HAN, Zengzhou YANG, Jinchen HAN, Zhijie XIA, Hong ZHAO, Xin YAO, Qianming DONG, Zugang LIU. Regulation of Copper Content and Simulation of CIGSSe Solar Cells Prepared by Nanoparticles Ink Method[J]. Optoelectronic Technology, 2023, 43(4): 298
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