• Microelectronics
  • Vol. 53, Issue 5, 904 (2023)
CHEN Xiaojuan1、2, ZHANG Yichuan2, YUAN Jing2, GAO Runhua22, YIN Haibo2、3, LI Yankui2, LIU Xinyu22, and WEI Ke2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.230001 Cite this Article
    CHEN Xiaojuan, ZHANG Yichuan, YUAN Jing, GAO Runhua2, YIN Haibo, LI Yankui, LIU Xinyu2, WEI Ke. Development of a Millimeter-Wave AlN/GaN MIS-HEMT Device for Low Voltage Application[J]. Microelectronics, 2023, 53(5): 904 Copy Citation Text show less
    References

    [1] CAMARCHIA V, QUAGLIA R, PIACIBELLO A, et al. A review of technologies and design techniques of millimeter-wave power amplifiers [J]. IEEE Transactions on Microwave Theory and Techniques, 2020, 68(7): 2957-2983.

    [2] ROCCAFORTE F, LESZCZYNSKI M Nitride semiconductor technology: power electronics and optoelectronic devices [M]. Weinheim, Germany: Wiley-VCH, 2020.

    [5] ZIMMERMANN T, DEEN D, CAO Y, et al. AlN/GaN insulated-Gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance [J]. IEEE Electron Device Letters, 2008, 29(7): 661-664.

    [6] MEDJDOUB F, ZEGAOUI M, WALDHOFF N, et al. Above 600 mS/mm transconductance with 2.3 A/mm drain current density AIN/GaN high-electron-mobility transistors grown on silicon [J]. Applied Physics Express, 2011, 4(6): 064106.1-064106.3.

    [7] WANG Y, HUANG S, WANG X, et al. Effects of fluorine plasma treatment on Au-free ohmic contacts to ultrathin-barrier AlGaN/GaN heterostructure [J]. IEEE Transactions on Electron Devices, 2019, 66(7): 2932-2936.

    CHEN Xiaojuan, ZHANG Yichuan, YUAN Jing, GAO Runhua2, YIN Haibo, LI Yankui, LIU Xinyu2, WEI Ke. Development of a Millimeter-Wave AlN/GaN MIS-HEMT Device for Low Voltage Application[J]. Microelectronics, 2023, 53(5): 904
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