Dian JIAO, Si-guo XIAO. Luminescence and Long Afterglow Properties of In3+ and Si4+ Co-Doped ZnBi0.02Ga1.98O4:Cr3+[J]. Spectroscopy and Spectral Analysis, 2020, 40(12): 3716
- Spectroscopy and Spectral Analysis
- Vol. 40, Issue 12, 3716 (2020)
Fig. 1. XRD patterns for ZBGO:Cr3+ doped with In3+, Si4+ of different
Fig. 2. Excitation spectra for ZBGO:Cr3+ (a); ZBGO:Cr3+, In3+ (b) and ZBGO:Cr3+, In3+, Si4+ (c) samples (monitored at 695 nm) and comparison on relative inlensity of excitation spectra for above three samples (d)
Fig. 3. Emission spectra for ZBGO:Cr3+ and ZBGO:Cr3+, In3+ samples. The inset shows the In3+ concentration dependent emission intensity
Fig. 4. Emission spectra for ZBGO:Cr3+, In3+ and ZBGO:Cr3+, In3+, Si4+ samples. The inset shows the Si4+ concentration dependent emission intensity
Fig. 5. Luminescence Decay curves for ZBGO:1%Cr3+; ZBGO:Cr3+, In3+ and ZBGO:Cr3+, In3+, Si4+ samples. The Inset is the Luminescence Decay curves for ZBGO:1%Cr3+, 9%In3+ further doped with Si4+ ions of 3%, 5% and 7% concentration
Fig. 6. Thermoluminescence curves for ZBGO:1%Cr3+ and ZBGO:1%Cr3+, 9%In3+ samples
Fig. 7. Thermoluminescence curves for ZBGO:Cr3+, In3+, Si4+ samples of different Si4+ concentration
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Table 1. The decay time constants for ZBGO:1%Cr3+; ZBGO:1%Cr3+, 9%In3+ and ZBGO:1%Cr3+, 9%In3+
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