• Acta Optica Sinica
  • Vol. 22, Issue 10, 1275 (2002)
[in Chinese]*, [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese]. The Si-Based Double Barrier Tunneling Light Emitting Junction[J]. Acta Optica Sinica, 2002, 22(10): 1275 Copy Citation Text show less

    Abstract

    The structure, fabrication technology and light emission properties of double barrier MIMIS tunneling junction are discussed. It shows better characteristics in comparison with MIS junction. The maximal luminance of the MIMIS devices is 1.9 cd/m 2, and their sprctrum peak appears in the blue area. The phenomena can be well explained according to resonant tunneling theory.
    [in Chinese], [in Chinese], [in Chinese]. The Si-Based Double Barrier Tunneling Light Emitting Junction[J]. Acta Optica Sinica, 2002, 22(10): 1275
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