• Semiconductor Optoelectronics
  • Vol. 44, Issue 4, 596 (2023)
HUANG Hong1、2, SANG Maosheng2, WANG Nili2, XU Guoqing2, and XU Jintong2、*
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.16818/j.issn1001-5868.2023042302 Cite this Article
    HUANG Hong, SANG Maosheng, WANG Nili, XU Guoqing, XU Jintong. A New Method for Measuring The Minority Carrier Lifetime of MWIR HgCdTe Materials by Transient Photoresponse Method[J]. Semiconductor Optoelectronics, 2023, 44(4): 596 Copy Citation Text show less
    References

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    [3] Rogalski A. HgCdTe infrared detector material: history, status and outlook[J]. Reports on Progress in Physics, 2005, 68(10): 2267.

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    [5] Khanna V K. Physical understanding and technological control of carrier lifetimes in semiconductor materials and devices: A critique of conceptual development, state of the art and applications[J]. Progress in Quantum Electronics, 2005, 29(2): 59-163.

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    [7] Cui H, Wang C, Wang J, et al. Measurement of minority carrier lifetime in infrared photovoltaic detectors using parallel circuit method[J]. Optical and Quantum Electronics, 2015, 47: 1367-1372.

    [8] James T, Musca C A, Antoszewski J, et al. Investigation of surface passivation of HgCdTe MWIR photodiode arrays via a flood illumination technique[C]// Conf. on Optoelectronic and Microelectronic Materials and Devices, 2004. IEEE, 2004: 185-188.

    [9] Dekorsy T, Pfeifer T, Kütt W, et al. Subpicosecond carrier transport in GaAs surface-space-charge fields[J]. Phys. Rev. B, 1993, 47(7): 3842.

    [10] Maloney P G. Minority carrier lifetime measurements of infrared photodetectors[D]. Johns Hopkins University, 2013.

    [11] Kinch M A, Aqariden F, Chandra D, et al. Minority carrier lifetime in p-HgCdTe[J]. J. of Electronic Materials, 2005, 34: 880-884.

    [12] Hess G T, Sanders T J. HgCdTe double-layer heterojunction detector device[J]. Proc. SPIE, 2000, 4028: 353-364.

    [13] Wenus J, Rutkowski J, Rogalski A. Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes[J]. IEEE Trans. on Electron Devices, 2001, 48(7): 1326-1332.

    HUANG Hong, SANG Maosheng, WANG Nili, XU Guoqing, XU Jintong. A New Method for Measuring The Minority Carrier Lifetime of MWIR HgCdTe Materials by Transient Photoresponse Method[J]. Semiconductor Optoelectronics, 2023, 44(4): 596
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