• Journal of Inorganic Materials
  • Vol. 38, Issue 3, 243 (2023)
Zhanguo QI1, Lei LIU1, Shouzhi WANG1、*, Guogong WANG1, Jiaoxian YU2, Zhongxin WANG1, Xiulan DUAN1, Xiangang XU1, and Lei ZHANG1、*
Author Affiliations
  • 11. Institute of Novel Semiconductors, State Key Laboratory of Crystal Material, Shandong University, Jinan 250100, China
  • 22. School of Materials Science and Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China
  • show less
    DOI: 10.15541/jim20220607 Cite this Article
    Zhanguo QI, Lei LIU, Shouzhi WANG, Guogong WANG, Jiaoxian YU, Zhongxin WANG, Xiulan DUAN, Xiangang XU, Lei ZHANG. Progress in GaN Single Crystals: HVPE Growth and Doping[J]. Journal of Inorganic Materials, 2023, 38(3): 243 Copy Citation Text show less
    Schematic diagram of GaN[4]
    1. Schematic diagram of GaN[4]
    Structure of HVPE reactor[8]
    2. Structure of HVPE reactor[8]
    Photos and characterization of GaN crystals grown by HVPE
    3. Photos and characterization of GaN crystals grown by HVPE
    Si-doped HVPE-GaN[38]
    4. Si-doped HVPE-GaN[38]
    Ge-doped HVPE-GaN[47]
    5. Ge-doped HVPE-GaN[47]
    Mg-doped HVPE-Ga
    6. Mg-doped HVPE-Ga
    Image of semi-insulated GaN wafers
    7. Image of semi-insulated GaN wafers
    Fe-doped GaN
    8. Fe-doped GaN
    C-doped GaN
    9. C-doped GaN
    TypeImpuritiesDopantCharacteristicApplicationRef.
    n typeSiSiCl2H2High carrier concentration; anti-surfactant effectHigh power and high current optoelectronic devices (LED, LD)
    GeGeCl4/Ge3N4Little effect on lattice structure and stress, causing no morphological deterioration, higher carriers concentration than that of Si-doped; creating cavities inside the sample[3]
    p typeMgMg(S)Increased lattice constant and band gap width, high conductivityLuminescent device[32]
    Semi-insulatingFeFe(S)/Cp2FeHigh resistivity (iron showing a parasitic effect, easy to diffuse)High power/frequency devices, HEMT, photoconductive switch, detectors[2]
    MnMn(S)
    CCH4/C2H4/C5H12
    Table 1. Different types of doped GaN[2-3,32]
    Zhanguo QI, Lei LIU, Shouzhi WANG, Guogong WANG, Jiaoxian YU, Zhongxin WANG, Xiulan DUAN, Xiangang XU, Lei ZHANG. Progress in GaN Single Crystals: HVPE Growth and Doping[J]. Journal of Inorganic Materials, 2023, 38(3): 243
    Download Citation