Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes

Zi-Hui Zhang; Jianquan Kou; Sung-Wen Huang Chen; Hua Shao; Jiamang Che; Chunshuang Chu; Kangkai Tian; Yonghui Zhang; Wengang Bi; Hao-Chung Kuo

doi:10.1364/prj.7.0000b1

Journals >Photonics Research >Volume 7 >Issue 4 >Page B1 > Article

Photonics Research
Vol. 7, Issue 4, B1 (2019)

Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes

Zi-Hui Zhang^1、2, Jianquan Kou¹, Sung-Wen Huang Chen³, Hua Shao¹, Jiamang Che¹, Chunshuang Chu¹, Kangkai Tian¹, Yonghui Zhang¹, Wengang Bi¹, and Hao-Chung Kuo^3、4、*

Author Affiliations

¹Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology, Key Laboratory of Electronic Materials and Devices of Tianjin, Tianjin 300401, China

²e-mail: zh.zhang@hebut.edu.cn

³Department of Photonics and Institute of Electro-Optical Engineering, Taiwan Chiao Tung University, Hsinchu 30010, China

⁴Department of Electrical Engineering and Computer Sciences and TBSI, University of California at Berkeley, Berkeley, California 94720, USA

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DOI: 10.1364/prj.7.0000b1 Cite this Article Set citation alerts

Zi-Hui Zhang, Jianquan Kou, Sung-Wen Huang Chen, Hua Shao, Jiamang Che, Chunshuang Chu, Kangkai Tian, Yonghui Zhang, Wengang Bi, Hao-Chung Kuo, "Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes," Photonics Res. 7, B1 (2019) Copy Citation Text

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Abstract

It is well known that the p-type AlGaN electron blocking layer (p-EBL) can block hole injection for deep ultraviolet light-emitting diodes (DUV LEDs). The polarization induced electric field in the p-EBL for [0001] oriented DUV LEDs makes the holes less mobile and thus further decreases the hole injection capability. Fortunately, enhanced hole injection is doable by making holes lose less energy, and this is enabled by a specifically designed p-EBL structure that has a graded AlN composition. The proposed p-EBL can screen the polarization induced electric field in the p-EBL. As a result, holes will lose less energy after going through the proposed p-EBL, which correspondingly leads to the enhanced hole injection. Thus, an external quantum efficiency of 7.6% for the 275 nm DUV LED structure is obtained.

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