• Semiconductor Optoelectronics
  • Vol. 42, Issue 2, 236 (2021)
LI Chengren1、*, WANG Yinghe1, ZHAO Qianyun1, WANG Xiaona2, and XU Qi1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • show less
    DOI: 10.16818/j.issn1001-5868.2021.02.015 Cite this Article
    LI Chengren, WANG Yinghe, ZHAO Qianyun, WANG Xiaona, XU Qi. Improvement of Laser Annealing on Photoluminescence Characteristics of CaSrSiO4∶Tb3+ Nanophosphor[J]. Semiconductor Optoelectronics, 2021, 42(2): 236 Copy Citation Text show less

    Abstract

    A series of CaSrSiO4 nanophosphors with different Tb3+-doped concentrations have been prepared by high-temperature solid-state reaction method. SEM image shows that the powder particles show a shape of ball and a diameter of about 30~50nm. XRD pattern of the samples doped Tb3+ ions is basically consistent with that of CaSrSiO4 matrix, indicating that Tb3+ dopant has little influence on the crystal structure of CaSrSiO4 powder. Under the 285nm excitation, the intense ultraviolet, blue and green PL spectra are observed and the optimum Tb3+-doped concentration is 0.7%. Finally, the CaSrSiO4∶0.3Tb3+ phosphor is annealed by CO2 laser and its spectral intensity is enhanced by more than 50%. At the same time, the effect of annealing process parameters on PL characteristics of CaSrSiO4∶Tb3+ phosphor is discussed.
    LI Chengren, WANG Yinghe, ZHAO Qianyun, WANG Xiaona, XU Qi. Improvement of Laser Annealing on Photoluminescence Characteristics of CaSrSiO4∶Tb3+ Nanophosphor[J]. Semiconductor Optoelectronics, 2021, 42(2): 236
    Download Citation