Proposed is a novel high-sensitivity sensor structure with a parallel bulk acoustic wave resonator (BAWR) and Ga2O3-based MSM UV sensor, namely the bulk acoustic wave resonance solar-blind UV sensor (BAWR-UV sensor). The MSM Ga2O3 UV sensor and BAWR sensor were designed and fabricated. The measured light and dark S parameters were packaged in the simulation software as S1P data model instead of MSM equivalent circuit, MBVD model was used instead of BAWR equivalent circuit, and the two structures were built in parallel to develop the BAWR-UV simulation model. The influence of the BAWR core parameters on the sensitivity of the BAWR-UV sensor was simulated by ADS software, and the design scheme to improve the sensitivity was studied. The simulation results show that in the frequency range of 0.5~4.5GHz, the larger the Qp of BAWR-UV, the higher the impedance sensitivity, and the impedance sensitivity increases with the decrease of frequency, and the optimal impedance sensitivity is 100kΩ/(μW/mm2) when fp=0.533GHz; the frequency sensitivity increases with the increase of frequency, and the best frequency sensitivity is 1.4MHz/(μW/mm2) when fp=4.5GHz. And also the exploration of high-sensitivity solar-blind UV sensors was carried out.