• Microelectronics
  • Vol. 53, Issue 5, 884 (2023)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
Author Affiliations
  • [in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.230092 Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. A Fast Transient Response LDO Circuit Based on Swing Rate Enhancement[J]. Microelectronics, 2023, 53(5): 884 Copy Citation Text show less

    Abstract

    A fast transient response output capacitor-less LDO circuit with slew rate enhancement was designed. The error amplifier adopted a current mirror transconductance structure, which reduced the difficulty coefficient of frequency compensation. In addition, a transient enhanced circuit that can provide additional charge and discharge current for the power transistor was designed, which demonstrated a quick response to the change of load, increased the slew rate, and effectively improved the load transient response. The simulation results show that the proposed circuit can achieve a phase margin larger than 60° among the full load range with only Miller compensation. Moreover, if the load jumps between 100 μA and 100 mA within 0.5 μs, the undershoot and overshoot voltage are 69 mV and 64mV respectively, and the settling time is 0.89 μs and 0.86 μs respectively. The undershoot and overshoot voltage are attenuated by 73% and 78% respectively compared with the one without a transient enhanced circuit, and the load transient response is significantly improved.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. A Fast Transient Response LDO Circuit Based on Swing Rate Enhancement[J]. Microelectronics, 2023, 53(5): 884
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