The nearly infrared enhanced PIN photodetector with high absorption efficiency black silicon micro-structure was fabricated by wet etching process based on nitric acid/hydrofluoric acid/phosphoric acid/sulfuric acid mixture. And the parameters of the fabricated photodetector were tested and compared with that of the PIN photodetector without black silicon. Test results show that the quantum efficiency of the black silicon photodetector reaches 80.7% and its response rate reaches 0.69A/W at 1060nm, which is 116% higher than that of the non-integrated black silicon devices. The dark current of the black silicon detector is less than 8nA, the response time is less than 8ns, and the capacitance is less than 9pF, which is equivalent to that of the non-integrated black silicon devices. Due to the process compatibility, the black silicon technology has the potential to be widely used in silicon-based near-infrared PIN, APD, SPAD, SPM and other photodetectors, so as to significantly improve the response rate, quantum efficiency, response speed, temperature coefficient of breakdown voltage and other performance.