ITO films have become a research hotspot in the fields of nonlinear optics and micro-nano optics because of its ability to achieve epsilon-near-zero and easy modulation. In this paper, ITO films were prepared on silicon substrates with the RF magnetron sputtering method. Then the optical parameters are tested and fitted by ellipsometer, which explore the adjustment mechanism of the ENZ wavelength of ITO thin films by factors such as background vacuum, sputtering power, sputtering pressure, substrate temperature and film thickness. And by optimizing the process, the shortest ENZ wavelength of the ITO film is blue-shifted to 1094.4nm, breaking the limit of previous reports. This research extends the ENZ wavelength of ITO films to the near-infrared short-wave region, and will realize the application expansion of micro-nano optoelectronic devices in the short-wave direction.