Investigation of Planar Optical Wavequides with DWB/SOI Structure

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Optica Sinica >Volume 14 >Issue 2 >Page 169 > Article

Acta Optica Sinica
Vol. 14, Issue 2, 169 (1994)

Investigation of Planar Optical Wavequides with DWB/SOI Structure

[in Chinese]¹, [in Chinese]², [in Chinese]^3、4、5, [in Chinese]^3、4、5, and [in Chinese]^3、4、5

Author Affiliations

¹[in Chinese]

²[in Chinese]

³Dept. Electronic and Electronic and Engineering

⁴University of Surrey

⁵Guildford, Surrey Gu2 5XH, England

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Investigation of Planar Optical Wavequides with DWB/SOI Structure[J]. Acta Optica Sinica, 1994, 14(2): 169 Copy Citation Text

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Abstract

The structure characteristics of SIMOX/SOI (Separation by implanted oxygen/silicon on insulator) and DWB (direct wafer bonding)/SOI are discussed. Some planar optical waveguides samples with different thickness of layer were fabricated in DWB/SOI structure. The propagstion losses were measured for both TE and TM modes at wavelenths of 1.15 μm and 1.523 μm. The lowest loss is close to the intrinsic aborption of pure crystal silicon. It indicated that the DWB/SOI structure is a Potential material for optical waveguides.

Keywords

direct wafer bonding silicon on insulator optical waveguides

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Investigation of Planar Optical Wavequides with DWB/SOI Structure[J]. Acta Optica Sinica, 1994, 14(2): 169

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