• Electro-Optic Technology Application
  • Vol. 29, Issue 5, 47 (2014)
LI Yang1, DONG Su-su2, WANG Yi-ran2, WANG Feng-chao2, and ZOU Jun2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: Cite this Article
    LI Yang, DONG Su-su, WANG Yi-ran, WANG Feng-chao, ZOU Jun. Optical Characterization of Light-Emitting Diodes Fabricated with Vertical and Flip-Chip Structure[J]. Electro-Optic Technology Application, 2014, 29(5): 47 Copy Citation Text show less

    Abstract

    When driving current is or more than 350 mA operation current, the optical characterization and variation trend of vertical and flip-chip structure light-emitting chip (LED) of 1.16 mm GaN-based blue light chip are researched. With the increasing of the driving current value, comparing with that of vertical structure LED, the luminous flux saturation current value of flip-chip structure LED is increased 350 mA. At the condition of 1 200 mA current value, the luminous flux value is more than 25.9%, the abnormal current value of color temperature is increased 400 mA and luminous efficiency is increased 81 m/W in average. Experimental results show that flip-chip structure LED has better anti-impulse stability from high power current and optical output characterization. And the operation life of LED in application is improved effectively.
    LI Yang, DONG Su-su, WANG Yi-ran, WANG Feng-chao, ZOU Jun. Optical Characterization of Light-Emitting Diodes Fabricated with Vertical and Flip-Chip Structure[J]. Electro-Optic Technology Application, 2014, 29(5): 47
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