• Semiconductor Optoelectronics
  • Vol. 43, Issue 4, 797 (2022)
SHI Heping1, ZHANG Lizhu1, and YU Shihui2、*
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.16818/j.issn1001-5868.2022031702 Cite this Article
    SHI Heping, ZHANG Lizhu, YU Shihui. Investigation on Preparation and Performance of ZnSnO/AgNW Bi-layer Transparent Electrodes[J]. Semiconductor Optoelectronics, 2022, 43(4): 797 Copy Citation Text show less

    Abstract

    High-performance ZnSnO/AgNW bi-layer transparent electrode was prepared by the processes of spin coating and magnetron sputtering. The morphology and phase structure of ZnSnO/AgNW bi-layer electrode were characterized and analyzed by X-ray diffractometer and scanning electron microscope, and the electrical and optical properties of ZnSnO/AgNW bi-layer transparent electrode were characterized by UV-visible spectrophotometer and four-probe tester, respectively. The experimental results show that the ZnSnO/AgNW bi-layer transparent electrode displays excellent electrical and optical properties. Under the optimal conditions, the square resistance is 12.3Ω/□ at transmittance of 88.1%, while the quality factor is as high as 231. The ZnSnO/AgNW bi-layer transparent electrode is tested for 1000 bends at a curvature radius of 5.0mm, and its resistance increased by only 13%, demonstrating its excellent flexibility. In addition, the square resistance remained basically unchanged after 20 tape adhesion tests and high temperature and humidity tests, indicating its excellent adhesion and oxidation resistance.
    SHI Heping, ZHANG Lizhu, YU Shihui. Investigation on Preparation and Performance of ZnSnO/AgNW Bi-layer Transparent Electrodes[J]. Semiconductor Optoelectronics, 2022, 43(4): 797
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