Ridge-waveguide superluminescent diodes (SLD) with compressive strain multi-quantum-well were designed and fabricated. The TE mode reflectivity of the TiO2/SiO2 four-layer broadband antireflection film is about 10-6, and the effects of the deviation of the angle of the ridged waveguide and the thickness of the film on the reflectivity of the antireflection film are analyzed. The experimental results show that the single-tube output power of the designed SLD chip can reach 22.7mW, the output spectrum FWHM is about 37.3nm, the spectral ripple coefficient is less than 0.15dB, and the TE mode output intensity is dominant with a polarization degree of about 19.2dB under 250mA DC current.