Structure and Luminescence Properties of Eu3+ and Dy3+ Co-implanted AlN FilmsHai MA, Xiao-dan WANG, Xiang LI, Dan WANG, Hong-min MAO, and Xiong-hui ZENG
Dy3+ and Eu3+ ions with different doses were implanted into AlN thin films grown by hydride vapor phase epitaxy method. For Dy doped AlN, results of X-ray diffraction and Raman scattering show that the compressive stress of the sample increases with the increase of Dy3+ dose. When the Dy3+ dose increases from 5×1014 at/cm2 to 1×1015 at/cm2, the compressive stress of samples is close to saturation. For Dy3+ and Eu3+ co-doped AlN, according to the cathodoluminescence spectra, a possible energy transfer process between Dy3+ and Eu3+ is proposed. In addition, through changing the dose ratio of Dy3+ respect to Eu3+ ions, the chromaticity coordinates and color temperatures of Dy3+ and Eu3+ co-doped AlN can be effectively regulated. Dy3+ and Eu3+ ions with different doses were implanted into AlN thin films grown by hydride vapor phase epitaxy method. For Dy doped AlN, results of X-ray diffraction and Raman scattering show that the compressive stress of the sample increases with the increase of Dy3+ dose. When the Dy3+ dose increases from 5×1014 at/cm2 to 1×1015 at/cm2, the compressive stress of samples is close to saturation. For Dy3+ and Eu3+ co-doped AlN, according to the cathodoluminescence spectra, a possible energy transfer process between Dy3+ and Eu3+ is proposed. In addition, through changing the dose ratio of Dy3+ respect to Eu3+ ions, the chromaticity coordinates and color temperatures of Dy3+ and Eu3+ co-doped AlN can be effectively regulated.showLess Acta Photonica Sinica
- Publication Date: Aug. 25, 2020
- Vol. 49, Issue 8, 0831001 (2020)