• Infrared and Laser Engineering
  • Vol. 47, Issue 3, 321004 (2018)
Wang Lishuan1、2、*, Yang Xiao2, Liu Dandan2, Jiang Chenghui2, Liu Huasong1、2, Ji Yiqin1、2, Zhang Feng2, Fan Rongwei1, and Chen Deying1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/irla201847.0321004 Cite this Article
    Wang Lishuan, Yang Xiao, Liu Dandan, Jiang Chenghui, Liu Huasong, Ji Yiqin, Zhang Feng, Fan Rongwei, Chen Deying. Annealing effect of the optical properties of tantalum oxide thin film prepared by ion beam sputtering[J]. Infrared and Laser Engineering, 2018, 47(3): 321004 Copy Citation Text show less

    Abstract

    The effect of annealing in atmospheric environment on Ta2O5 thin films was researched, which were prepared by ion beam sputtering. The annealing temperatures ranged from 150 ℃ to 550 ℃, and the interval was 200 ℃. The optical band gap (1-4 eV) of the Ta2O5 thin film was characterized by the Cody-Lorentz dielectric model. And the microstructure vibration was characterized by the oscillator model in the range of infrared region(400-4 000 cm-1). The results show that the turning point of the annealing temperature appeared between 150 ℃ and 350 ℃. The extinction coefficient of the thin film increased when the annealing temperature was above the turning point. The variation of Urbach energy was in accordance with the extinction coefficient, but the variation of band gap was opposite. By analyzing the microstructure vibration in infrared, it′s found that the stoichiometry defect of the protoxide was in the Ta2O5 films.
    Wang Lishuan, Yang Xiao, Liu Dandan, Jiang Chenghui, Liu Huasong, Ji Yiqin, Zhang Feng, Fan Rongwei, Chen Deying. Annealing effect of the optical properties of tantalum oxide thin film prepared by ion beam sputtering[J]. Infrared and Laser Engineering, 2018, 47(3): 321004
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