• Journal of Inorganic Materials
  • Vol. 35, Issue 9, 987 (2020)
Yaping ZHANG1, Yuxuan LEI1, Wenming DING2, Lianqing YU2、*, and Shuaifei ZHU1
Author Affiliations
  • 1College of Science, China University of Petroleum, Qingdao 266580, China
  • 2College of Material Science and Engineering, China University of Petroleum, Qingdao 266580, China
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    DOI: 10.15541/jim20190516 Cite this Article
    Yaping ZHANG, Yuxuan LEI, Wenming DING, Lianqing YU, Shuaifei ZHU. Preparation and Photoelectrochemical Property of the Dual-ferroelectric Composited Material[J]. Journal of Inorganic Materials, 2020, 35(9): 987 Copy Citation Text show less

    Abstract

    BiVO4 film was synthesized via template method, the ferroelectric material BiFeO3 was prepared by Sol-Gel method to modify BiVO4. By means of dual-ferroelectric semiconductor composition, the photochemical properties of BiVO4 was greatly improved. The electrochemical test results show that the superior photoelectrochemical properties of BiVO4 film are achieved after spin-coating with BiFeO3 for 5 times. It owns an optimal photocurrent density of 0.72 mA·cm-2, which is 67.4% higher than that of pure BiVO4. The energy band bending regulation via electric field polarization could further boost the photoelectrochemical property of BiVO4/nBiFeO3 ferroelectric composite. The highest photocurrent density of the composite after polarization at 20 V reaches 0.91 mA·cm-2, which is more than twice of pure BiVO4 film. The combination of BiFeO3 and BiVO4 is favorable for forming heterojuncting, generating and separating of photogenic electrons and holes. The electric field polarization regulating band bending accelerates the photogenic charge transfer, which is the main reason for the improved photoelectrochemical properties of ferroelectric composite.
    Yaping ZHANG, Yuxuan LEI, Wenming DING, Lianqing YU, Shuaifei ZHU. Preparation and Photoelectrochemical Property of the Dual-ferroelectric Composited Material[J]. Journal of Inorganic Materials, 2020, 35(9): 987
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