Shijun Xia, Borui Xu, Pengfei Xu, Shuai Bao, Renfan Wang, Yao Zhu, Wei Li, Ninghua Zhu. 1.3 μm High-Speed Directly Modulated Semiconductor Laser[J]. Acta Optica Sinica, 2022, 42(16): 1614001
- Acta Optica Sinica
- Vol. 42, Issue 16, 1614001 (2022)
Fig. 1. Simulation results of optical confinement factor and internal loss varying with number of quantum wells
Fig. 2. 1.3 μm DFB laser. (a) Schematic diagram of three-dimensional structure of laser; (b) schematic diagram of epitaxial structure of laser; (c) scanning electron microscope diagram of ridge waveguide in laser; (d) top view of actual manufactured core
Fig. 3. P-I-V test results of laser
Fig. 4. Characteristic temperature test of laser. (a) P-I test results at 20-80 ℃; (b) relation curve between threshold current and temperature, and characteristic temperature fitting
Fig. 5. Spectral diagram of device at different currents under 25 ℃
Fig. 6. Laser spectrum varying with temperature at pulse width of 40 μs and pulse period of 1000 μs. (a) Lasing spectra at different chip temperatures; (b) relationship between lasing wavelength of device and chip temperature, and result of linear fitting
Fig. 7. Test result of laser linewidth
Fig. 8. Frequency response test curves of laser under different currents
Fig. 9. Eye graph test results of different transmission rates at 25 ℃. (a) 25 Gb/s; (b) 30 Gb/s; (c) 35 Gb/s; (d) 40 Gb/s
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