• Acta Optica Sinica
  • Vol. 42, Issue 16, 1614001 (2022)
Shijun Xia1、2、3, Borui Xu1、2、3, Pengfei Xu4, Shuai Bao4, Renfan Wang5, Yao Zhu5, Wei Li1、2、3, and Ninghua Zhu1、2、3、*
Author Affiliations
  • 1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2College of Materials Science and Opto-Electronics Technology, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 4Jiangsu Huaxing Laser Technology Co., Ltd., Xuzhou 221300, Jiangsu , China
  • 5Wuhan Mindsemi Company Limited, Wuhan 430223, Hubei , China
  • show less
    DOI: 10.3788/AOS202242.1614001 Cite this Article
    Shijun Xia, Borui Xu, Pengfei Xu, Shuai Bao, Renfan Wang, Yao Zhu, Wei Li, Ninghua Zhu. 1.3 μm High-Speed Directly Modulated Semiconductor Laser[J]. Acta Optica Sinica, 2022, 42(16): 1614001 Copy Citation Text show less

    Abstract

    A 1.3 μm high-speed directly modulated semiconductor laser based on AlGaInAs material is designed. The designed laser uses the ridge waveguide structure, the cavity with short length and eleven multi-quantum wells with thickness of 5 nm combined with the graded index separate confinement heterostructure (GRIN-SCH) with thickness of 30 nm to achieve laser output with low threshold, wide bandwidth and high power. A stable single longitudinal mode output is achieved by using uniform grating and asymmetric cavity surface coating. Based on the 1.3 μm high-speed directly modulated semiconductor laser at room temperature, the threshold current is about 7.5 mA, the 3 dB small signal modulation bandwidth can reach 25 GHz, the large signal back-to-back transmission rate can reach 40 Gb/s, the slope efficiency is 0.35 mW/mA, the maximum output power is about 39 mW, and the side mode rejection ratio can reach 40 dB.