• Photonics Research
  • Vol. 9, Issue 8, 1581 (2021)
Fangchen Hu1, Shouqing Chen2, Guoqiang Li1, Peng Zou1, Junwen Zhang1, Jian Hu2, Jianli Zhang2, Zhixue He3, Shaohua Yu3, Fengyi Jiang2, and Nan Chi1、*
Author Affiliations
  • 1Key Laboratory for Information Science of Electromagnetic Waves (MoE), Department of Communication Science and Engineering, Fudan University, Shanghai 200433, China
  • 2National Institute of LED on Silicon Substrate, Nanchang University, Nanchang 330096, China
  • 3State Key Laboratory of Optical Communication Technologies and Networks, China Information Communication Technologies Group Corporation, Wuhan 430074, China
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    DOI: 10.1364/PRJ.424934 Cite this Article Set citation alerts
    Fangchen Hu, Shouqing Chen, Guoqiang Li, Peng Zou, Junwen Zhang, Jian Hu, Jianli Zhang, Zhixue He, Shaohua Yu, Fengyi Jiang, Nan Chi. Si-substrate LEDs with multiple superlattice interlayers for beyond 24 Gbps visible light communication[J]. Photonics Research, 2021, 9(8): 1581 Copy Citation Text show less
    Schematic of Si-substrate LED vertical structure of the three samples with SL period numbers of 8, 15, and 32.
    Fig. 1. Schematic of Si-substrate LED vertical structure of the three samples with SL period numbers of 8, 15, and 32.
    (a) Schematic of the V-pits and carrier transportation situation for Samples A–C. SEM images of the MQW layer for three LED samples with SL period numbers of (b) 8, (c) 15, and (d) 32.
    Fig. 2. (a) Schematic of the V-pits and carrier transportation situation for Samples A–C. SEM images of the MQW layer for three LED samples with SL period numbers of (b) 8, (c) 15, and (d) 32.
    Optoelectronic characteristics of LED Samples A, B, and C. (a) Light output power–current–voltage (L-I-V) characteristics under a CW injection current. (b) EQE under different currents. (c) Luminous efficacy under different currents.
    Fig. 3. Optoelectronic characteristics of LED Samples A, B, and C. (a) Light output power–current–voltage (L-I-V) characteristics under a CW injection current. (b) EQE under different currents. (c) Luminous efficacy under different currents.
    Electroluminescence (EL) spectra of Samples A, B, and C under various currents.
    Fig. 4. Electroluminescence (EL) spectra of Samples A, B, and C under various currents.
    Schematic of (a) the bracket and internal circuit structure and (b) layout for the WDM-LED array chip. (c) Graph of the packaged 4×4 WDM-LED array chip. (d) Magnified micrograph of every LED pixel.
    Fig. 5. Schematic of (a) the bracket and internal circuit structure and (b) layout for the WDM-LED array chip. (c) Graph of the packaged 4×4 WDM-LED array chip. (d) Magnified micrograph of every LED pixel.
    (a) CIE diagram of 16 LED pixels under the current of 100 mA. (b) L-I-V characteristics and relative optical power for 16 LED pixels in the WDM-LED array chip.
    Fig. 6. (a) CIE diagram of 16 LED pixels under the current of 100 mA. (b) L-I-V characteristics and relative optical power for 16 LED pixels in the WDM-LED array chip.
    (a) Upper: flow block diagram of the digital signal processing (DSP) in our VLC system. Lower: experimental setup of the VLC system. (b) Block diagram of the principle of the MLC algorithm. (AWG, arbitrary waveform generator; OSC, oscilloscope; DMT Mod., DMT modulation; DMT Demod., DMT demodulation; ZF Equ., zero-forcing equalization.)
    Fig. 7. (a) Upper: flow block diagram of the digital signal processing (DSP) in our VLC system. Lower: experimental setup of the VLC system. (b) Block diagram of the principle of the MLC algorithm. (AWG, arbitrary waveform generator; OSC, oscilloscope; DMT Mod., DMT modulation; DMT Demod., DMT demodulation; ZF Equ., zero-forcing equalization.)
    VLC performance of LED Samples A, B, and C. (a) −10-dB bandwidth after hardware pre-equalization. (b) Estimated SNR of the three samples versus frequency. (c) Data rate and BER versus bandwidth for LED Samples A–C.
    Fig. 8. VLC performance of LED Samples A, B, and C. (a) 10-dB bandwidth after hardware pre-equalization. (b) Estimated SNR of the three samples versus frequency. (c) Data rate and BER versus bandwidth for LED Samples A–C.
    Schematic of intensity modulation of LEDs with different resistance (R) and EQE (E) to explain the data rate gain from LED’s relatively more SL periodicity. (V0, the bias voltage; Lc, the bias optical power; I, current; V, voltage; L, light output power.)
    Fig. 9. Schematic of intensity modulation of LEDs with different resistance (R) and EQE (E) to explain the data rate gain from LED’s relatively more SL periodicity. (V0, the bias voltage; Lc, the bias optical power; I, current; V, voltage; L, light output power.)
    SNR, allocated bit number, and power ratio versus subcarrier for eight LED channels when BPL-DMT modulation is utilized.
    Fig. 10. SNR, allocated bit number, and power ratio versus subcarrier for eight LED channels when BPL-DMT modulation is utilized.
    (a) Data rates versus bandwidth; (b) maximum data rates and BER for eight LED channels. (λ1: 456 nm, λ2: 480 nm, λ3: 500 nm, λ4: 526 nm, λ5: 556 nm, λ6: 583 nm, λ7: 631 nm, λ8: 660 nm.)
    Fig. 11. (a) Data rates versus bandwidth; (b) maximum data rates and BER for eight LED channels. (λ1: 456  nm, λ2: 480  nm, λ3: 500  nm, λ4: 526  nm, λ5: 556  nm, λ6: 583  nm, λ7: 631  nm, λ8: 660  nm.)
    Data rates versus bandwidths in a 20-m VLC link. Inset: the received QAM signal diagrams at the data rate of 2.02 Gbps.
    Fig. 12. Data rates versus bandwidths in a 20-m VLC link. Inset: the received QAM signal diagrams at the data rate of 2.02 Gbps.
    LED TypeModulation FormatData Rate (Gbps)DistanceData Source
    Si-LED (8 colors)PS-bit-loading-DMT20.081.2 m underwaterOFC 2020 [35]
    uLED (RGBY)Bit-loading OFDM15.731.6 m free spaceJLT 2019 [38]
    Si-LED (RGBYC)Bit-loading DMT15.171.2 m underwaterPR 2019 [5]
    Si-LED (RGBYC)DFTS-OFDM14.61.2 m underwaterOFC 2019 [39]
    Si-LED (RGBYC)DMT10.721.2 m underwaterOFC 2018 [40]
    uLED (RGBY)Bit-loading OFDM10.2Free spaceECOC 2018 [41]
    uLED (RGBY) + RC-LED (R)Bit-loading OFDM10.041.5 m free spaceJLT 2016 [42]
    LED (RGB)CAP81 m free spacePJ 2015 [43]
    Table 1. Recent Achievements Applying WDM-LEDs
    Fangchen Hu, Shouqing Chen, Guoqiang Li, Peng Zou, Junwen Zhang, Jian Hu, Jianli Zhang, Zhixue He, Shaohua Yu, Fengyi Jiang, Nan Chi. Si-substrate LEDs with multiple superlattice interlayers for beyond 24 Gbps visible light communication[J]. Photonics Research, 2021, 9(8): 1581
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