• Acta Photonica Sinica
  • Vol. 31, Issue 2, 205 (2002)
[in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. THE FORMATION OF STRAINED STATES OF AlGaAs/GaAs EPITAXIAL LAYERS OF TRANSPARENT GaAs PHOTOCATHODE DURING ITS MOCVD PROGRESS[J]. Acta Photonica Sinica, 2002, 31(2): 205 Copy Citation Text show less

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. THE FORMATION OF STRAINED STATES OF AlGaAs/GaAs EPITAXIAL LAYERS OF TRANSPARENT GaAs PHOTOCATHODE DURING ITS MOCVD PROGRESS[J]. Acta Photonica Sinica, 2002, 31(2): 205
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