A blind element analysis method for indium antimonide(InSb)infrared focal plane devices is proposed. By using this method, blind element testing and analysis can be performed without thinning the back of the device. Based on this packaging method, after the device is inverted, the radiation of light is absorbed from the front side of the chip, and testing and analysis can be performed after interconnection, glue filling, and each grinding and polishing process step. The results show that this method can effectively analyze and locate the blind elements generated during each step, and can solve the problem that the pixel failure in the infrared focal plane device due to the generated blind elements can not be located accurately in a certain process for the existing technical means.