• Journal of Semiconductors
  • Vol. 40, Issue 8, 081509 (2019)
Baoxing Zhai1, Juan Du2, Xueping Li3, Congxin Xia1, and Zhongming Wei4
Author Affiliations
  • 1Department of Physics, Henan Normal University, Xinxiang 453007, China
  • 2State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
  • 3College of Electronic and Electrical Engineering, Henan Normal University, Xinxiang 453007, China
  • 4Institutes of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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    DOI: 10.1088/1674-4926/40/8/081509 Cite this Article
    Baoxing Zhai, Juan Du, Xueping Li, Congxin Xia, Zhongming Wei. Two-dimensional ferromagnetic materials and related van der Waals heterostructures: a first-principle study[J]. Journal of Semiconductors, 2019, 40(8): 081509 Copy Citation Text show less

    Abstract

    Since the successful fabrication of two-dimensional (2D) ferromagnetic (FM) monolayer CrI3 and Cr2Ge2Te6, 2D FM materials are becoming an exciting research topic in condensed matter physics and materials fields, as they provide a good platform to explore the fundamental physical properties of magnetic materials under 2D limit. In this review, we summarize the theoretical research progress of intrinsic 2D FM materials and related van der Waals heterostructures (vdWHs) including their electronic structures, magnetism, Curie temperature, valley polarization, and band alignment. Moreover, we also summarize recent researches on the methods that used to regulate the above properties of 2D FM materials and vdWHs, such as defects, doping, strain, electric field and interlayer coupling. These studies show that 2D FM materials have broad application prospects in spintronics and valleytronics. However, there are still many problems waiting to be solved on the way to practical application.
    Baoxing Zhai, Juan Du, Xueping Li, Congxin Xia, Zhongming Wei. Two-dimensional ferromagnetic materials and related van der Waals heterostructures: a first-principle study[J]. Journal of Semiconductors, 2019, 40(8): 081509
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