Due to the need for external power supply, the conventional matter wave guide on chip with the ring structure cannot form a perfectly closed ring. The defects naturally exist in the generated ring magnetic trap, which hinds the effective manipulation of cold atom. Using Through-Silicon Via(TSV) technology could insert wires perpendicular to the surface of the atom chip, potentially reducing the impact of the inserted wires on the ring magnetic trap. Here a ring atomic matter wave guide based on TSV technology is modeled via finite element method. The magnetic fields produced by the wires with various loading current are analyzed. The effects of the cross-sectional shape, the depth, and the gap of the TSV on the magnetic trap produced by the ring wire are systematically studied. Finally, combined with the simulation results, a ring waveguide atomic chip based on TSV structure that is feasible in processing technology is designed.