• Frontiers of Optoelectronics
  • Vol. 5, Issue 1, 90 (2012)
Zhiyong LI*, Liang ZHOU, Xi XIAO, Tao CHU, Yude YU, and Jinzhong YU
Author Affiliations
  • State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors (IS), Chinese Academy of Sciences (CAS), Beijing 100083, China
  • show less
    DOI: 10.1007/s12200-012-0197-6 Cite this Article
    Zhiyong LI, Liang ZHOU, Xi XIAO, Tao CHU, Yude YU, Jinzhong YU. Improved extinction ratio of Mach-Zehnder based optical modulators on CMOS platform[J]. Frontiers of Optoelectronics, 2012, 5(1): 90 Copy Citation Text show less

    Abstract

    Silicon based optical modulators with improved extinction ratio (ER) of 25 dB were demonstrated on complementary metal oxide semiconductor (CMOS) platform. It was proposed that the effect of optical absorption due to free carriers accumulated in silicon should be considered in the analysis of device configuration. Experimental results presented in this study were identical with the proposed analyses. The modulators were operated with the data transmission rate of 3.2 Gbps.
    Zhiyong LI, Liang ZHOU, Xi XIAO, Tao CHU, Yude YU, Jinzhong YU. Improved extinction ratio of Mach-Zehnder based optical modulators on CMOS platform[J]. Frontiers of Optoelectronics, 2012, 5(1): 90
    Download Citation