• Microelectronics
  • Vol. 52, Issue 1, 33 (2022)
YANG Yang, LEI Langcheng, GAO Weiqi, HU Yongfei, LIU Honghong, and FU Dongbing
Author Affiliations
  • [in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.210266 Cite this Article
    YANG Yang, LEI Langcheng, GAO Weiqi, HU Yongfei, LIU Honghong, FU Dongbing. Study on Compensation Method for Polysilicon Resistance Linearity[J]. Microelectronics, 2022, 52(1): 33 Copy Citation Text show less

    Abstract

    The influence of the nonlinearity of polysilicon silicon resistance on the overall circuit performance of signal chain was introduced, and the causes of the nonlinearity of polycrystalline silicon resistance were analyzed. Two nonlinear compensation design methods, substrate potential compensation and composite polysilicon compensation, were proposed. The performance of 12 bit D/A converter without compensation and with the new compensation method were compared by simulation and test. The results showed that the D/A converter with polycrystalline silicon resistance compensation and nonlinear compensation achieved better linearity.
    YANG Yang, LEI Langcheng, GAO Weiqi, HU Yongfei, LIU Honghong, FU Dongbing. Study on Compensation Method for Polysilicon Resistance Linearity[J]. Microelectronics, 2022, 52(1): 33
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