• Photonics Research
  • Vol. 9, Issue 11, 11002132 (2021)
Tingzhu Wu1、2、†, Yue Lin1、2、†, Yu-Ming Huang3、†, Meng Liu1, Konthoujam James Singh3, Wansheng Lin1, Tingwei Lu1, Xi Zheng1, Jianyang Zhou1, Hao-Chung Kuo3、4、5、*, and Zhong Chen1、2、6、*
Author Affiliations
  • 1School of Electronic Science and Engineering, Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen 361005, China
  • 2Fujian Science & Technology Innovation Laboratory for Energy Materials of China, Xiamen 361005, China
  • 3Department of Photonics and Graduate Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, Taiwan Chiao Tung University, Hsinchu 30010, China
  • 4Semiconductor Research Center, Hon Hai Research Institute, Taipei 11492, China
  • 5e-mail: hckuo@faculty.nctu.edu.tw
  • 6e-mail: chenz@xmu.edu.cn
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    (a) 4-inch semipolar (20−21) blue LED epitaxial wafer and 2-inch commercially available c-plane InGaN/GaN LED wafer with its rear side polished; (b) SEM image showing a cross-sectional view of the semipolar LED epitaxial wafer; (c) optical microscopic image of the 30 μm μLED array sample; schematic diagrams of (d) the semipolar (20−21) μLED structures, (e) the fabrication process and a photo of the color conversion layer, and (f) proposed PNC–μLED device.
    Fig. 1. (a) 4-inch semipolar (20−21) blue LED epitaxial wafer and 2-inch commercially available c-plane InGaN/GaN LED wafer with its rear side polished; (b) SEM image showing a cross-sectional view of the semipolar LED epitaxial wafer; (c) optical microscopic image of the 30 μm μLED array sample; schematic diagrams of (d) the semipolar (20−21) μLED structures, (e) the fabrication process and a photo of the color conversion layer, and (f) proposed PNC–μLED device.
    XRD patterns of the CsPbBrI2−SiO2 and CsPbBr3−SiO2 PNCs.
    Fig. 2. XRD patterns of the CsPbBrI2SiO2 and CsPbBr3SiO2 PNCs.
    TEM images of (a) CsPbBr3−SiO2 and (c) CsPbBrI2-C PNCs; high-resolution TEM images of the (b) CsPbBr3−SiO2 and (d) CsPbBrI2−SiO2 PNCs; and size distributions of (e) CsPbBr3 and (f) CsPbBr2. Inset in (a) is the TEM image of MS before sintering.
    Fig. 3. TEM images of (a) CsPbBr3SiO2 and (c) CsPbBrI2-C PNCs; high-resolution TEM images of the (b) CsPbBr3SiO2 and (d) CsPbBrI2SiO2 PNCs; and size distributions of (e) CsPbBr3 and (f) CsPbBr2. Inset in (a) is the TEM image of MS before sintering.
    EDS element maps of (a) CsPbBrI2−SiO2 and (b) CsPbBr3−SiO2 PNCs.
    Fig. 4. EDS element maps of (a) CsPbBrI2SiO2 and (b) CsPbBr3SiO2 PNCs.
    UV-vis absorption and PL spectra of (a) CsPbBrI2−SiO2 and (b) CsPbBr3−SiO2. The PL properties of the red and green PNCs, as well as the solution-processed samples, are shown in response to (c) ambient and (d) blue light exposure.
    Fig. 5. UV-vis absorption and PL spectra of (a) CsPbBrI2SiO2 and (b) CsPbBr3SiO2. The PL properties of the red and green PNCs, as well as the solution-processed samples, are shown in response to (c) ambient and (d) blue light exposure.
    (a) Current density–voltage (J–V) curve for the 30 μm μLED array and its illuminated image; (b) EL spectra for different injection currents; (c) peak wavelength shift and FWHM as a function of current density; and (d) EQE and emitted power as a function of current density.
    Fig. 6. (a) Current density–voltage (J–V) curve for the 30 μm μLED array and its illuminated image; (b) EL spectra for different injection currents; (c) peak wavelength shift and FWHM as a function of current density; and (d) EQE and emitted power as a function of current density.
    (a) Polarization characteristics of the 30 μm×4 semipolar μLED array; and (b) TRPL curves for the semipolar μLED array and the PNCs.
    Fig. 7. (a) Polarization characteristics of the 30  μm×4 semipolar μLED array; and (b) TRPL curves for the semipolar μLED array and the PNCs.
    (a) Schematic diagram for bandwidth measurement; (b) frequency response for the PNC–μLED; (c) schematic diagram for the eye diagram measurement; (d)–(f) eye diagrams of the PNC–μLED at 1.0, 1.2, and 1.5 Gb/s, respectively.
    Fig. 8. (a) Schematic diagram for bandwidth measurement; (b) frequency response for the PNC–μLED; (c) schematic diagram for the eye diagram measurement; (d)–(f) eye diagrams of the PNC–μLED at 1.0, 1.2, and 1.5 Gb/s, respectively.
    (a) Color gamut of the PNC–μLED under different current densities; and (b) color shift of blue semipolar μLEDs under different current densities.
    Fig. 9. (a) Color gamut of the PNC–μLED under different current densities; and (b) color shift of blue semipolar μLEDs under different current densities.
    SamplesCsBr (g)PbI2 (g)PbBr2 (g)MCM-41 (all-silica) MS (g)
    CsPbBrI2SiO20.731.5902.00
    CsPbBr3SiO20.7301.272.00
    Table 1. Precursor Masses