• Journal of Infrared and Millimeter Waves
  • Vol. 40, Issue 1, 7 (2021)
Hong-Bo LU1、2、3, Xin-Yi LI2、*, Ge LI2, Wei ZHANG2, Shu-Hong HU1, Ning DAI1、*, and Gui-Ting YANG2
Author Affiliations
  • 1State Key Laboratory of Infrared Physics,Shanghai Institute of Technology Physics of the Chinese Academy of Sciences,Shanghai 200083,China
  • 2State Key Laboratory of Space Power-sources,Shanghai Institute of Space Power-sources,Shanghai 200245,China
  • 3University of Chinese Academy of Sciences,Beijing 100049,China
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    DOI: 10.11972/j.issn.1001-9014.2021.01.002 Cite this Article
    Hong-Bo LU, Xin-Yi LI, Ge LI, Wei ZHANG, Shu-Hong HU, Ning DAI, Gui-Ting YANG. Reducing Voc loss in InGaAsP/InGaAs dual-junction solar cells[J]. Journal of Infrared and Millimeter Waves, 2021, 40(1): 7 Copy Citation Text show less
    Cross-section of MOVPE stack containing three BSF/InGaAsP/BSF DHs.
    Fig. 1. Cross-section of MOVPE stack containing three BSF/InGaAsP/BSF DHs.
    Cross-section of the InGaAsP/InGaAs double-junction solar cell structure.
    Fig. 2. Cross-section of the InGaAsP/InGaAs double-junction solar cell structure.
    Element profiles (a) and PL decay curves (b) for InP-barrier and InAlAs-barrier DH1s.
    Fig. 3. Element profiles (a) and PL decay curves (b) for InP-barrier and InAlAs-barrier DH1s.
    Overall SIMS results of (a) InP-barrier DH stack and (b) InAlAs-barrier DH stack.
    Fig. 4. Overall SIMS results of (a) InP-barrier DH stack and (b) InAlAs-barrier DH stack.
    PL decay curves of (a) InP-barrier DHs and (b) InAlAs-barrier DHs.
    Fig. 5. PL decay curves of (a) InP-barrier DHs and (b) InAlAs-barrier DHs.
    Steady-state PL of (a) InP-barrier DHs and (b) InAlAs-barrier DHs. Weak peaks marked by asteroids in DH1 and DH2 are related to the spacers.
    Fig. 6. Steady-state PL of (a) InP-barrier DHs and (b) InAlAs-barrier DHs. Weak peaks marked by asteroids in DH1 and DH2 are related to the spacers.
    (a) Light J-V and (b) spectra response curves for InGaAsP/InGaAs solar cells using InP and InAlAs BSF layers
    Fig. 7. (a) Light J-V and (b) spectra response curves for InGaAsP/InGaAs solar cells using InP and InAlAs BSF layers
    Light J-V for InGaAsP/InGaAs DJSC using 5-period InP/InAlAs SL BSF layer.
    Fig. 8. Light J-V for InGaAsP/InGaAs DJSC using 5-period InP/InAlAs SL BSF layer.
    ReferenceMethodBandgapIllumination

    Jsc

    (mA/cm2)

    Voc

    (mV)

    Woc

    (mV)

    Oshima [2]MBE1.0/0.71AM1.5G13.15701140
    Wu [3]MBE1.05/0.73AM1.5G16.1830950
    Zhao [4]MOVPE1.07/0.74AM1.5D10.2977833
    Table 1. Previous reported results for InGaAsP/InGaAs DJSC
    Barrierm2 (m0)m1 (m0)ΔEc (meV)S (cm/s)
    InP0.080.0472305793
    InAlAs0.0750.0474600.738
    Table 2. Calculated surface recombination velocity at barrier/InGaAsP interface using Eq.. (3)
    τeff (ns)DH1DH2DH3
    InP-barrier70.036.535.2
    InAlAs-barrier110.053.045.0
    Table 3. The effective minority-carrier lifetime of the DHs
    Hong-Bo LU, Xin-Yi LI, Ge LI, Wei ZHANG, Shu-Hong HU, Ning DAI, Gui-Ting YANG. Reducing Voc loss in InGaAsP/InGaAs dual-junction solar cells[J]. Journal of Infrared and Millimeter Waves, 2021, 40(1): 7
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