• Photonics Research
  • Vol. 10, Issue 2, 373 (2022)
Tongtong Kang1、2、†, Boyu Fan3、†, Jun Qin1、2, Weihao Yang1、2, Shuang Xia1、2, Zheng Peng1、2, Bo Liu4、5, Sui Peng4、5, Xiao Liang4、5, Tingting Tang4、5, Longjiang Deng1、2, Yi Luo6, Hanbin Wang6、7, Qiang Zhou3, and Lei Bi1、2、*
Author Affiliations
  • 1National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 2State Key Laboratory of Electronic Thin-Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 3Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 4College of Optoelectronic Engineering, Chengdu University of Information Technology, Chengdu 610225, China
  • 5State Key Laboratory of Vanadium and Titanium Resources Comprehensive Utilization, Panzhihua 617000, China
  • 6Microsystem & Terahertz Research Center, China Academy of Engineering Physics (CAEP), Chengdu 610200, China
  • 7Institute of Electronic Engineering, China Academy of Engineering Physics (CAEP), Mianyang 621900, China
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    DOI: 10.1364/PRJ.445571 Cite this Article Set citation alerts
    Tongtong Kang, Boyu Fan, Jun Qin, Weihao Yang, Shuang Xia, Zheng Peng, Bo Liu, Sui Peng, Xiao Liang, Tingting Tang, Longjiang Deng, Yi Luo, Hanbin Wang, Qiang Zhou, Lei Bi. Mid-infrared active metasurface based on Si/VO2 hybrid meta-atoms[J]. Photonics Research, 2022, 10(2): 373 Copy Citation Text show less
    Device structure and process flow. (a) Process flow and schematics of the two hybrid α-Si/VO2 metasurfaces with VO2 at the bottom and center of the α-Si nanodisks. SEM images of the (b) HMB and (c) HMM devices. Inset shows the top-view SEM image.
    Fig. 1. Device structure and process flow. (a) Process flow and schematics of the two hybrid α-Si/VO2 metasurfaces with VO2 at the bottom and center of the α-Si nanodisks. SEM images of the (b) HMB and (c) HMM devices. Inset shows the top-view SEM image.
    Tunable optical properties of HMB and HMM configurations. (a) Simulated and (b) measured transmittance spectra of the HMB configuration at dielectric and metallic states. (c) Simulated and (d) measured transmittance spectra of HMM configuration at dielectric and metallic states. Simulated transmission phase spectra of (e) HMB and (f) HMM configurations at dielectric and metallic states.
    Fig. 2. Tunable optical properties of HMB and HMM configurations. (a) Simulated and (b) measured transmittance spectra of the HMB configuration at dielectric and metallic states. (c) Simulated and (d) measured transmittance spectra of HMM configuration at dielectric and metallic states. Simulated transmission phase spectra of (e) HMB and (f) HMM configurations at dielectric and metallic states.
    Modal profiles of the HMB and HMM devices at ED and MD wavelengths, for both the dielectric state (D state) and the metallic state (M state). (a) Electric field distributions of ED mode at the dielectric state (left) and the metallic state (right) for the HMB device. (b) Electric field distributions of MD mode at the dielectric state (left) and the metallic state (right) for the HMB device. (c) Electric field distributions of the ED mode for the dielectric state (left) and the metallic state (right) of the HMM device. (d) Electric field distributions of MD mode for the dielectric state (left) and the metallic state (right) of the HMM device.
    Fig. 3. Modal profiles of the HMB and HMM devices at ED and MD wavelengths, for both the dielectric state (D state) and the metallic state (M state). (a) Electric field distributions of ED mode at the dielectric state (left) and the metallic state (right) for the HMB device. (b) Electric field distributions of MD mode at the dielectric state (left) and the metallic state (right) for the HMB device. (c) Electric field distributions of the ED mode for the dielectric state (left) and the metallic state (right) of the HMM device. (d) Electric field distributions of MD mode for the dielectric state (left) and the metallic state (right) of the HMM device.
    Multipolar decomposition of the scattering cross sections. Scattering cross-section spectra of ED and MD modes of (a) HMB and (b) HMM configurations at the dielectric and metallic states. Simulated and fitted transmission spectra of (c) HMB and (d) HMM configurations for different metallic fractions of VO2.
    Fig. 4. Multipolar decomposition of the scattering cross sections. Scattering cross-section spectra of ED and MD modes of (a) HMB and (b) HMM configurations at the dielectric and metallic states. Simulated and fitted transmission spectra of (c) HMB and (d) HMM configurations for different metallic fractions of VO2.
    Metal Fractionλ1/μmΓi1λ2/μmΓi2κΓe1Γe2
    0%3.704.3007.55.0
    20%3.70.24.31.208.55.8
    40%3.70.54.42.608.76.1
    60%3.70.84.45.408.57.0
    80%3.60.78.8
    100%3.60.57.7
    Table 1. Fitting Parameters of the HMB Device
    Metal Fractionλ1/μmΓi1λ2/μmΓi2κΓe1Γe2
    0%3.604.3007.86.4
    20%3.62.14.40.8010.85.5
    40%3.64.64.50.7012.85.8
    60%3.65.44.50.8010.86.8
    80%4.60.46.3
    100%4.607.6
    Table 2. Fitting Parameters of the HMM Device
    Tongtong Kang, Boyu Fan, Jun Qin, Weihao Yang, Shuang Xia, Zheng Peng, Bo Liu, Sui Peng, Xiao Liang, Tingting Tang, Longjiang Deng, Yi Luo, Hanbin Wang, Qiang Zhou, Lei Bi. Mid-infrared active metasurface based on Si/VO2 hybrid meta-atoms[J]. Photonics Research, 2022, 10(2): 373
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