• Photonics Research
  • Vol. 10, Issue 2, 02000373 (2022)
Tongtong Kang1、2、†, Boyu Fan3、†, Jun Qin1、2, Weihao Yang1、2, Shuang Xia1、2, Zheng Peng1、2, Bo Liu4、5, Sui Peng4、5, Xiao Liang4、5, Tingting Tang4、5, Longjiang Deng1、2, Yi Luo6, Hanbin Wang6、7, Qiang Zhou3, and Lei Bi1、2、*
Author Affiliations
  • 1National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 2State Key Laboratory of Electronic Thin-Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 3Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 4College of Optoelectronic Engineering, Chengdu University of Information Technology, Chengdu 610225, China
  • 5State Key Laboratory of Vanadium and Titanium Resources Comprehensive Utilization, Panzhihua 617000, China
  • 6Microsystem & Terahertz Research Center, China Academy of Engineering Physics (CAEP), Chengdu 610200, China
  • 7Institute of Electronic Engineering, China Academy of Engineering Physics (CAEP), Mianyang 621900, China
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    Abstract

    Active metasurfaces whose optical properties can be tuned by an external stimulus have attracted great research interest recently. Introduction of VO2 phase change material in all-dielectric metasurfaces has been demonstrated to modulate the resonance wavelength and amplitude in the visible to near-infrared wavelength range. In this study, we report a mid-infrared active metasurface based on Si/VO2 hybrid meta-atoms. By incorporating VO2 thin films in different locations of Si/VO2 all-dielectric nanodisks, we demonstrate different modulation amplitude of the electric or magnetic resonance scattering cross sections, leading to drastically different transmission spectrum upon VO2 insulator to metal phase transition. The physical mechanism is originated from the field profiles of the resonance modes, which interact with VO2 differently depending on its locations. Based on this mechanism, we experimentally demonstrated a large modulation of the transmittance from 82% to 28% at the 4.6 μm wavelength. Our work demonstrates a promising potential of VO2-based active all-dielectric metasurface for mid-infrared photonic applications such as infrared camouflage, chemical/biomedical sensing, optical neuromorphic computing, and multispectral imaging.

    1. INTRODUCTION

    All-dielectric metasurfaces enabling light manipulation in two-dimensional photonic nanostructures have attracted great research interest recently. Compared to plasmonic devices, all-dielectric metasurfaces show characteristics of low optical absorption and unique Mie resonant modes [16]. A variety of novel photonic devices based on all-dielectric metasurfaces have been developed, including metalens [710], beam steerers [1113], polarizers [14], and optical holography [1521]. In the mid-infrared wavelength range, all-dielectric metasurfaces are promising for sensing, multispectral imaging, emissivity control, and infrared camouflage applications [2227]. Nevertheless, most all-dielectric metasurfaces in the mid-infrared are static with fixed optical properties by design, which limit their application for tunable photonic devices.