• Chinese Physics B
  • Vol. 29, Issue 8, (2020)
Yuhao Pan1, Bao Lei1、2, Jingsi Qiao1, Zhixin Hu3, Wu Zhou2, and Wei Ji1、†
Author Affiliations
  • 1Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Renmin University of China, Beijing 00872, China
  • 2School of Physical Sciences and CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
  • 3Center for Joint Quantum Studies and Department of Physics, Institute of Science, Tianjin University, Tianjin 0050, China
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    DOI: 10.1088/1674-1056/ab9438 Cite this Article
    Yuhao Pan, Bao Lei, Jingsi Qiao, Zhixin Hu, Wu Zhou, Wei Ji. Selective linear etching of monolayer black phosphorus using electron beams[J]. Chinese Physics B, 2020, 29(8): Copy Citation Text show less

    Abstract

    Point and line defects are of vital importance to the physical and chemical properties of certain two-dimensional (2D) materials. Although electron beams have been demonstrated to be capable of creating single- and multi-atom defects in 2D materials, the products are often random and difficult to predict without theoretical inputs. In this study, the thermal motion of atoms and electron incident angle were additionally considered to study the vacancy evolution in a black phosphorus (BP) monolayer by using an improved first-principles molecular dynamics method. The P atoms in monolayer BP tend to be struck away one by one under an electron beam within the displacement threshold energy range of 8.55–8.79 eV, which ultimately induces the formation of a zigzag-like chain vacancy. The chain vacancy is a thermodynamically metastable state and is difficult to obtain by conventional synthesis methods because the vacancy formation energy of 0.79 eV/edge atom is higher than the typical energy in monolayer BP. Covalent-like quasi-bonds and a charge density wave are formed along the chain vacancy, exhibiting rich electronic properties. This work proposes a theoretical protocol for simulating a complete elastic collision process of electron beams with 2D layers and will facilitate the establishment of detailed theoretical guidelines for experiments on 2D material etching using focused high-energy electron beams.
    Yuhao Pan, Bao Lei, Jingsi Qiao, Zhixin Hu, Wu Zhou, Wei Ji. Selective linear etching of monolayer black phosphorus using electron beams[J]. Chinese Physics B, 2020, 29(8):
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