• Acta Photonica Sinica
  • Vol. 50, Issue 6, 179 (2021)
Tuo WANG1、2, Hongmei CHEN2, Huimin JIA1, Zhonghui YAO2, Dan FANG1, Cheng JIANG2, Ziyang ZHANG2, Kexue LI1, Jilong TANG1, and Zhipeng WEI1
Author Affiliations
  • 1State Key Laboratory of Hight Power Seminconductor Laser, College of Science, Changchun University of Science and Technology, Changchun30022, China
  • 2Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science, Suzhou, Jiangsu1513, China
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    DOI: 10.3788/gzxb20215006.0623002 Cite this Article
    Tuo WANG, Hongmei CHEN, Huimin JIA, Zhonghui YAO, Dan FANG, Cheng JIANG, Ziyang ZHANG, Kexue LI, Jilong TANG, Zhipeng WEI. Performance Research and Fabrication of 1 310 nm Superluminescent Diodes with High Power[J]. Acta Photonica Sinica, 2021, 50(6): 179 Copy Citation Text show less

    Abstract

    In order to optimize the performance of the 1 310 nm superluminescent diode, such as increase the output power of the device. In this simulation, the parameters of waveguide structure, and the heat dissipation for 1 310 nm superluminescent diode with the J-type waveguide have been investigated. The research results show that the waveguide etching depth, bending angle and thickness of the insulating layer were important for achieve high power output. Based on the research results, the superluminescent diode device structure and fabrication process were optimized, and J-type superluminescent diode with a ridge width of 5 μm, a bending angle of 8°, an etching depth of 1.7 μm and an insulating layer thickness of 300 nm was prepared. The superluminescent diode with 1.5 mm straight waveguide length has realized a high output power (42.2 mW) and wide bandwidth (10 nm) under 500 mA continuous-wave operation at room temperature.
    Tuo WANG, Hongmei CHEN, Huimin JIA, Zhonghui YAO, Dan FANG, Cheng JIANG, Ziyang ZHANG, Kexue LI, Jilong TANG, Zhipeng WEI. Performance Research and Fabrication of 1 310 nm Superluminescent Diodes with High Power[J]. Acta Photonica Sinica, 2021, 50(6): 179
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