• Microelectronics
  • Vol. 52, Issue 1, 109 (2022)
LIU Yi
Author Affiliations
  • [in Chinese]
  • show less
    DOI: 10.13911/j.cnki.1004-3365.210218 Cite this Article
    LIU Yi. Simulation Study on the Effect of Interface Charge on Cylindrical High k VDMOS[J]. Microelectronics, 2022, 52(1): 109 Copy Citation Text show less

    Abstract

    Compared with traditional VDMOS, the superjunction and high k dielectric structure VDMOS could achieve higher breakdown voltage and lower on-resistance. The effects of various structural parameters on electric field distribution, breakdown voltage and specific on-resistance of 3D cylindrical high k VDMOS with and without interfacial charges were systematically summarized by simulation software. The variation trend and reason of breakdown voltage and specific on-resistance with parameters were studied and qualitatively analyzed. This study provided a reference for the design of high k VDMOS.