• Chinese Physics B
  • Vol. 29, Issue 8, (2020)
Sheng Hu1, Ling Yang1、†, Min-Han Mi2, Bin Hou2, Sheng Liu3, Meng Zhang1, Mei Wu2, Qing Zhu1, Sheng Wu2, Yang Lu2, Jie-Jie Zhu1, Xiao-Wei Zhou1, Ling Lv1, Xiao-Hua Ma2, and Yue Hao2
Author Affiliations
  • 1State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 7007, China
  • 2School of Microelectronics, Xidian University, Xi’an 710071, China
  • 3Shanghai Precision Metrology and Testing Research Institute, Shanghai 201109, China
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    DOI: 10.1088/1674-1056/ab96a4 Cite this Article
    Sheng Hu, Ling Yang, Min-Han Mi, Bin Hou, Sheng Liu, Meng Zhang, Mei Wu, Qing Zhu, Sheng Wu, Yang Lu, Jie-Jie Zhu, Xiao-Wei Zhou, Ling Lv, Xiao-Hua Ma, Yue Hao. Trap analysis of composite 2D–3D channel in AlGaN/GaN/graded-AlGaN:Si/GaN:C multi-heterostructure at different temperatures[J]. Chinese Physics B, 2020, 29(8): Copy Citation Text show less

    Abstract

    The graded AlGaN:Si back barrier can form the majority of three-dimensional electron gases (3DEGs) at the GaN/graded AlGaN:Si heterostructure and create a composite two-dimensional (2D)–three-dimensional (3D) channel in AlGaN/GaN/graded-AlGaN:Si/GaN:C heterostructure (DH:Si/C). Frequency-dependent capacitances and conductance are measured to investigate the characteristics of the multi-temperature trap states of in DH:Si/C and AlGaN/GaN/GaN:C heterostructure (SH:C). There are fast, medium, and slow trap states in DH:Si/C, while only medium trap states exist in SH:C. The time constant/trap density for medium trap state in SH:C heterostructure are (11 μs–17.7 μs)/(1.1 × 1013 cm-2·eV-1–3.9× 1013 cm-2·eV-1) and (8.7 μs–14.1 μs)/(0.7× 1013 cm-2·eV-1–1.9× 1013 cm-2·eV-1) at 300 K and 500 K respectively. The time constant/trap density for fast, medium, and slow trap states in DH:Si/C heterostructure are (4.2 μs–7.7 μs)/(1.5× 1013 cm-2·eV-1–3.2× 1013 cm-2·eV-1), (6.8 μs–11.8 μs)/(0.8× 1013 cm-2 · eV-1–2.8× 1013 cm-2 · eV-1), (30.1 μs–151 μs)/(7.5× 1012 cm-2 · eV-1–7.8× 1012 cm-2 · eV-1) at 300 K and (3.5 μs–6.5 μs)/(0.9× 1013 cm-2 · eV-1–1.8× 1013 cm-2 · eV-1), (4.9 μs–9.4 μs)/(0.6× 1013 cm-2 · eV-1–1.7× 1013 cm-2 · eV-1), (20.6 μs–61.9 μs)/(3.2× 1012 cm-2 · eV-1–3.5× 1012 cm-2·eV-1) at 500 K, respectively. The DH:Si/C structure can effectively reduce the density of medium trap states compared with SH:C structure.
    Sheng Hu, Ling Yang, Min-Han Mi, Bin Hou, Sheng Liu, Meng Zhang, Mei Wu, Qing Zhu, Sheng Wu, Yang Lu, Jie-Jie Zhu, Xiao-Wei Zhou, Ling Lv, Xiao-Hua Ma, Yue Hao. Trap analysis of composite 2D–3D channel in AlGaN/GaN/graded-AlGaN:Si/GaN:C multi-heterostructure at different temperatures[J]. Chinese Physics B, 2020, 29(8):
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